Georgantas - Google Patents
Session 9 Overview: High-Performance WirelessGeorgantas
View PDF- Document ID
- 5063243841287310046
- Author
- Georgantas T
External Links
Snippet
In Paper 9.1, Broadcom presents a 13mm2, 40nm SAW-less TX 2G/HSPA+/TDSCDMA/LTE Cat4 transceiver. It operates from 0.7 GHz to 2.7 GHz and supports free-running XO operation and 32kHz RTC generation. 36/65mA in 3G/LTE20 B1 at-50dBm TX/-60dBm RX is …
- 101700024259 ACLR 0 abstract description 14
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B1/0483—Transmitters with multiple parallel paths
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/403—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—BASIC ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/32—Carrier systems characterised by combinations of two or more of the types covered by groups H04L27/02, H04L27/10, H04L27/18 or H04L27/26
- H04L27/34—Amplitude- and phase-modulated carrier systems, e.g. quadrature-amplitude modulated carrier systems
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Razavi et al. | A uwb cmos transceiver | |
Lee et al. | A sub-6-GHz 5G new radio RF transceiver supporting EN-DC with 3.15-Gb/s DL and 1.27-Gb/s UL in 14-nm FinFET CMOS | |
US9813089B2 (en) | Digital predistortion linearization for power amplifiers | |
Eloranta et al. | A Multimode Transmitter in 0.13$\mu\hbox {m} $ CMOS Using Direct-Digital RF Modulator | |
Song et al. | A low-power NB-IoT transceiver with digital-polar transmitter in 180-nm CMOS | |
US20050265481A1 (en) | Fully digital transmitter including a digital band-pass sigma-delta modulator | |
Perraud et al. | A direct-conversion CMOS transceiver for the 802.11 a/b/g WLAN standard utilizing a Cartesian feedback transmitter | |
US9698845B2 (en) | High oversampling ratio dynamic element matching scheme for high dynamic range digital to RF data conversion for radio communication systems | |
Georgantas et al. | 9.1 A 13mm 2 40nm multiband GSM/EDGE/HSPA+/TDSCDMA/LTE transceiver | |
US9622181B2 (en) | Power efficient, variable sampling rate delta-sigma data converters for flexible radio communication systems | |
US9660690B2 (en) | Optimized data converter design using mixed semiconductor technology for flexible radio communication systems | |
US9853843B2 (en) | Software programmable, multi-segment capture bandwidth, delta-sigma modulators for flexible radio communication systems | |
Darabi et al. | Analysis and design of small-signal polar transmitters for cellular applications | |
Tan et al. | A 2.4 GHz WLAN transceiver with fully-integrated highly-linear 1.8 V 28.4 dBm PA, 34dBm T/R switch, 240MS/s DAC, 320MS/s ADC, and DPLL in 32nm SoC CMOS | |
Liu et al. | An energy-efficient polar transmitter for IEEE 802.15. 6 body area networks: system requirements and circuit designs | |
Ingels et al. | A Linear 28nm CMOS Digital Transmitter with 2× 12bit up to LO Baseband Sampling and− 58dBc C-IM3 | |
Razavi et al. | Multiband UWB transceivers | |
Lu et al. | Dual-band 802.11 ax transceiver design with 1024-QAM and 160-MHz CBW support | |
Huang et al. | A 400MHz Single‐Chip CMOS Transceiver for Long Range High Definition Video Transmission in UAV Application | |
Yin et al. | A 0.1–6.0-GHz dual-path SDR transmitter supporting intraband carrier aggregation in 65-nm CMOS | |
Wei et al. | A fully integrated reconfigurable low-power sub-GHz transceiver for 802.11 ah in 65nm CMOS | |
Georgantas | Session 9 Overview: High-Performance Wireless | |
Munker et al. | Digital rf cmos transceivers for gprs and edge | |
Wang et al. | A 2.85-mm $^{2} $ Wideband RF Transceiver in 40-nm CMOS for IoT Micro-Hub Applications | |
Huang et al. | A tri-band, 2-RX MIMO, 1-TX TD-LTE CMOS transceiver |