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Kim et al., 2012 - Google Patents

Charge transport in poly (3-butylthiophene) nanowires and their nanocomposites with an insulating polymer

Kim et al., 2012

Document ID
5061565523049938514
Author
Kim F
Jenekhe S
Publication year
Publication venue
Macromolecules

External Links

Snippet

Self-assembled crystalline nanowires (NWs) of poly (3-butylthiophene)(P3BT), having an average width of 11.8 nm and aspect ratios of∼ 330–850, and their nanocomposites with insulating polystyrene (PS) were found to have a high field-effect mobility of holes and a …
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    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
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    • H01L51/0508Field-effect devices, e.g. TFTs
    • H01L51/0512Field-effect devices, e.g. TFTs insulated gate field effect transistors
    • H01L51/0545Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode
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    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
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    • H01L51/0035Organic polymers or oligomers comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline, polyphenylene, polyphenylene vinylene
    • H01L51/0036Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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