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Chang et al., 2008 - Google Patents

GaN-Based Schottky Barrier Photodetectors With a 12-Pair Mg $ _ {\rm x} $ N $ _ {\rm y} $–GaN Buffer Layer

Chang et al., 2008

Document ID
4798822734277718039
Author
Chang S
Lee K
Chang P
Wang Y
Yu C
Kuo C
Wu S
Publication year
Publication venue
IEEE journal of quantum electronics

External Links

Snippet

GaN-based ultraviolet (UV) photodetectors (PDs) separately prepared with a conventional single low-temperature (LT) GaN buffer layer and a 12-pair Mg x N y-GaN buffer layer were both fabricated. It was found that we could reduce threading dislocation (TD) density and …
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
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    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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