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Jia et al., 2023 - Google Patents

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia et al., 2023

Document ID
4780393489689431123
Author
Jia C
Deng G
Liu L
Zhao P
Song G
Liu J
Zhang Y
Publication year
Publication venue
Journal of Physics D: Applied Physics

External Links

Snippet

Reduction in the size, weight, and power (SWaP) consumption of an infrared (IR) detection system is one of the critical challenges lying ahead for the development of IR detector technology, especially for mid-/long-wavelength IR wave bands, which calls for high …
Continue reading at iopscience.iop.org (other versions)

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    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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    • H01L27/144—Devices controlled by radiation
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