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Dupuis et al., 2008 - Google Patents

Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes

Dupuis et al., 2008

Document ID
4643216893190755582
Author
Dupuis R
Ryou J
Shen S
Yoder P
Zhang Y
Kim H
Choi S
Lochner Z
Publication year
Publication venue
Journal of Crystal Growth

External Links

Snippet

Wide-bandgap III-nitride-based photodetectors are excellent candidates for high-sensitivity and cost-effective detection of photons in the ultraviolet and near-UV spectral region. Owing to the superior intrinsic properties of III-nitride materials for the detection of photons with …
Continue reading at www.sciencedirect.com (other versions)

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    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infra-red, visible or ultra-violet radiation
    • H01L31/102—Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier
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