Nothing Special   »   [go: up one dir, main page]

Kuyel et al., 1990 - Google Patents

The effects of broadband 250 nm illumination on process latitude

Kuyel et al., 1990

Document ID
4559415628252884994
Author
Kuyel B
Sewell H
Publication year
Publication venue
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

External Links

Snippet

The effects on lithography of the spectral bandwidth of the illumination used in an optical step‐and‐scan projection aligner have been studied J. Buckley and C. Karatzas, SPIE 1 0 8 8, 424 (1989). An illumination bandwidth of 240–255 nm is compared with a single …
Continue reading at pubs.aip.org (other versions)

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control, in all parts of the microlithographic apparatus, e.g. pulse length control, light interruption
    • G03F7/70558Dose control, i.e. achievement of a desired dose
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70058Mask illumination systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Similar Documents

Publication Publication Date Title
JP4044118B2 (en) Method for selecting light-absorbing compound in antireflection film
US6818361B2 (en) Photomasking
GB2270996A (en) Attenuated phase-shifted reticule using sub-resolution pattern
Lyubin et al. Novel effects in inorganic As 50 Se 50 photoresists and their application in micro-optics
US5916717A (en) Process utilizing relationship between reflectivity and resist thickness for inhibition of side effect caused by halftone phase shift masks
KR100510999B1 (en) Pattern forming method of semiconductor device
Ogawa et al. Practical resolution enhancement effect by new complete antireflective layer in KrF excimer laser lithography
US7759022B2 (en) Phase shift mask structure and fabrication process
Kuyel et al. The effects of broadband 250 nm illumination on process latitude
EP0885406B1 (en) Light-absorbing antireflective layers with improved performance due to refractive index optimization
US20050095539A1 (en) Exposure method
Neureuther et al. Factors affecting linewidth control including multiple wavelength exposure and chromatic aberration
O'Toole et al. Linewidth control in projection lithography using a multilayer resist process
US5543252A (en) Method for manufacturing exposure mask and the exposure mask
Sethi et al. Use of antireflective coatings in deep-UV lithography
O'Toole et al. Multilevel resist for photolithography utilizing an absorbing dye: simulation and experiment
EP0794460A2 (en) A process for device fabrication and an anti-reflective coating for use therein
JP2897692B2 (en) Resist pattern forming method, antireflection film forming method, antireflection film, and semiconductor device
Dunn et al. Deep-UV photolithography linewidth variation from reflective substrates
JPH1131650A (en) Antireflection coating, substrate to be treated, manufacture of the substrate to be treated, manufacture of fine pattern and manufacture of semiconductor device
JP2555675B2 (en) Pattern formation method
Narasimham et al. Effects Of Defocus On Photolithographic Images Obtained With Projection-Printing Systems
Tani et al. Optimization of amorphous carbon-deposited antireflective layer for advanced lithography
Dumford et al. Ag2Te/As2S3, a top‐surface, high‐contrast negative‐tone resist for deep ultraviolet submicron lithography
Asai et al. KrF Trilayer Resist System using Azide-Phenol Resin Resist