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Uematsu et al., 2018 - Google Patents

Narrow band-edge photoluminescence from AgInS2 semiconductor nanoparticles by the formation of amorphous III–VI semiconductor shells

Uematsu et al., 2018

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Document ID
4497258582911317991
Author
Uematsu T
Wajima K
Sharma D
Hirata S
Yamamoto T
Kameyama T
Vacha M
Torimoto T
Kuwabata S
Publication year
Publication venue
NPG Asia Materials

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Abstract Nanoparticles of I–III–VI semiconductors are promising candidates for novel non- toxic fluorescent materials. However, removal of defect levels responsible for their broad- band emission has not been successful to date. The present study demonstrates, for the first …
Continue reading at www.nature.com (HTML) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312

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