Nothing Special   »   [go: up one dir, main page]

Ishizaki et al., 2015 - Google Patents

Thermal cycle reliability of Cu-nanoparticle joint

Ishizaki et al., 2015

View PDF
Document ID
4239691045952518044
Author
Ishizaki T
Usui M
Yamada Y
Publication year
Publication venue
Microelectronics Reliability

External Links

Snippet

The improvement of the performance of power electronic devices requires the development of new Pb-free joint materials that are capable of enduring high temperatures more than 200° C. Cu-nanoparticle joints are considered to be promising for this purpose owing to their …
Continue reading at homepages.laas.fr (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]

Similar Documents

Publication Publication Date Title
Ishizaki et al. Thermal cycle reliability of Cu-nanoparticle joint
Chen et al. Comparing the mechanical and thermal-electrical properties of sintered copper (Cu) and sintered silver (Ag) joints
EP3590909B1 (en) Copper/ceramic joined body insulated circuit board, method for producing copper/ceramic joined body, and method for producing insulated circuit board
Suganuma et al. Low-temperature low-pressure die attach with hybrid silver particle paste
Ogura et al. Effects of reducing solvent on copper, nickel, and aluminum joining using silver nanoparticles derived from a silver oxide paste
Zou et al. Low temperature bonding of Cu metal through sintering of Ag nanoparticles for high temperature electronic application
Ishizaki et al. Reliability of Cu nanoparticle joint for high temperature power electronics
Lee et al. Die-attach for power devices using the Ag sintering process: Interfacial microstructure and mechanical strength
Feng et al. A transient liquid phase sintering bonding process using nickel-tin mixed powder for the new generation of high-temperature power devices
Ishizaki et al. Pressure-free bonding of metallic plates with Ni affinity layers using Cu nanoparticles
Huang et al. Effect of Ni content on mechanical properties and corrosion behavior of Al/Sn–9Zn–xNi/Cu joints
Ishizaki et al. Power cycle reliability of Cu nanoparticle joints with mismatched coefficients of thermal expansion
Manikam et al. Sintering of silver–aluminum nanopaste with varying aluminum weight percent for use as a high-temperature die-attach material
Shen et al. SiC power device die attach for extreme environments
병석이 et al. Effect of sintering conditions on microstructure and mechanical strength of Cu micro-particle sintered joints for high-power semiconductor module applications
US9343425B1 (en) Methods for bonding substrates with transient liquid phase bonds by spark plasma sintering
Nguyen et al. Enhancement of bonding strength in BiTe-based thermoelectric modules by electroless nickel, electroless palladium, and immersion gold surface modification
Ishizaki et al. Pressureless bonding by use of Cu and Sn mixed nanoparticles
Li et al. Interface evolution analysis of graded thermoelectric materials joined by low temperature sintering of nano-silver paste
Yoon et al. Nickel–tin transient liquid phase sintering with high bonding strength for high-temperature power applications
Chen et al. Development of micron-sized Cu–Ag composite paste for oxidation-free bare Cu bonding in air condition and its deterioration mechanism during aging and power cycling tests
Sun et al. Solderless bonding with nanoporous copper as interlayer for high-temperature applications
Chen et al. Large-scale bare Cu bonding by 10 μm-sized Cu–Ag composite paste in low temperature low pressure air conditions
Guo et al. Robust Cu–Cu Bonding with Multiscale Coralloid Nano-Cu3Sn Paste for High-Power Electronics Packaging
Usui et al. Effects of thermal aging on Cu nanoparticle/Bi-Sn solder hybrid bonding