Attolini et al., 1986 - Google Patents
A new multinary layered compound in the HgGa2S4-HgIn2S4 systemAttolini et al., 1986
- Document ID
- 4188979074814556854
- Author
- Attolini G
- Curti M
- Paorici C
- Razzetti C
- Zanotti L
- Publication year
- Publication venue
- Journal of Crystal Growth
External Links
Snippet
A NEW MULTINARY LAYERED COMPOUND IN THE HgGa2S4-HgIn2S4 SYSTEM G. ATITOLINI,
M. CURTI, C. PAORICI ‘i’, C. RAZZETL’I * and Page 1 Journal ofCrystal Growth 79 (1986)
399—402 399 North-Holland, Amsterdam A NEW MULTINARY LAYERED COMPOUND IN THE …
- 150000001875 compounds 0 title description 11
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Kuriyama et al. | Optical band gap of the ordered filled-tetrahedral semiconductor LiMgP | |
Kirilyuk et al. | Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities | |
Pal'yanov et al. | High-pressure synthesis and characterization of diamond from a sulfur–carbon system | |
Attolini et al. | A new multinary layered compound in the HgGa2S4-HgIn2S4 system | |
Sebastian et al. | X‐ray diffraction study of the 2H to 3C solid state transformation in vapour grown single crystals of ZnS | |
Kourtakis et al. | Preparation and characterization of SnS2 | |
Lanver et al. | Luminescence spectra of Mn (II) in different symmetries | |
Brafman | Phonons and structure of ZnxCd1− xSe solid solution | |
Nitsche | Crystal growth and phase investigations in multi-component systems by vapour transport | |
Lewis et al. | The structure and optical properties of polycrystalline ZnSχSe1-χ prepared by chemical vapour deposition | |
Zach et al. | Electrical properties of the hydrogen defect in InP and the microscopic structure of the 2316 cm− 1 hydrogen related line | |
Isshiki et al. | Photoluminescence of Li-doped ZnSe single crystals | |
Briick et al. | Crystal growth of compounds in the MgO-Nb205 binary system | |
Shin et al. | Optical properties of undoped and Ni-doped VA-VIA-VIIA single crystals | |
Fleming | Growth of FeS2 (pyrite) from Te melts | |
Oh et al. | Impurity optical absorption of Co2+-doped MgAl2S4 and CaAl2S4 single crystals | |
Lusson et al. | Composition dependence of longitudinal optical phonon modes in Cd x Hg 1− x Te with 0.5≤ x≤ 1 | |
Karami et al. | Fabrication of IR windows grade zinc selenide by the reactive diffusive process | |
Kondo et al. | Annealing behaviors of quench-deposited (CsCl) 1− x (PbCl2) x films studied by optical absorption spectroscopy | |
Razzetti et al. | Synthesis and Characterization of the Layered Compounds in the ZnIn2S4–ZnIn2Se4 System | |
Dryden et al. | Ultraviolet A-band absorption in NaCl: Pb2+ and clustering of lattice defects | |
Aseev et al. | Lead lanthanide oxyfluorides in a glasslike matrix | |
Do et al. | The crystal growth and characterization of the solid solutions (ZnS) 1− x (CuGaS2) x | |
Ramdas | A1. 3 Electronic excitations in isotopically controlled diamonds: infrared and Raman spectroscopy of acceptor-bound holes | |
Mochizuki et al. | Effects of heat-treatments on the photoluminescence spectra in AgGaS2 |