Nothing Special   »   [go: up one dir, main page]

Na et al., 2016 - Google Patents

Preparation of bismuth telluride films with high thermoelectric power factor

Na et al., 2016

Document ID
4100614951153721633
Author
Na J
Kim Y
Park T
Park C
Kim E
Publication year
Publication venue
ACS applied materials & interfaces

External Links

Snippet

Highly conductive n-type Bi2Te3 films on a flexible substrate were prepared via electrodeposition followed by a transfer process using an adhesive substrate. The growth of the Bi2Te3 crystals was precisely controlled by an electrochemical deposition potential (V …
Continue reading at pubs.acs.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/54—Material technologies
    • Y02E10/549—Material technologies organic PV cells
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/34—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of or comprising active material
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof

Similar Documents

Publication Publication Date Title
Na et al. Preparation of bismuth telluride films with high thermoelectric power factor
Li et al. Fabrication of nanostructured thermoelectric bismuth telluride thick films by electrochemical deposition
Menke et al. Bismuth telluride (Bi2Te3) nanowires: Synthesis by cyclic electrodeposition/stripping, thinning by electrooxidation, and electrical power generation
Tan et al. Understanding the synthetic pathway of a single-phase quarternary semiconductor using surface-enhanced Raman scattering: a case of wurtzite Cu2ZnSnS4 nanoparticles
Nam et al. Structurally nanocrystalline-electrically single crystalline zno-reduced graphene oxide composites
Prieto et al. Electrodeposition of ordered Bi2Te3 nanowire arrays
Li et al. Effects of annealing and doping on nanostructured bismuth telluride thick films
Wang et al. Combustion Synthesis of p-Type Transparent Conducting CuCrO2+ x and Cu: CrO x Thin Films at 180° C
Cicvarić et al. Thermoelectric properties of bismuth telluride thin films electrodeposited from a nonaqueous solution
Yang et al. Formation and characterization of Sb2Te3 nanofilms on Pt by electrochemical atomic layer epitaxy
Scimeca et al. Rapid stoichiometry control in Cu2Se thin films for room-temperature power factor improvement
Hu et al. Large-scale and rapid synthesis of ultralong ZnO nanowire films via anodization
Burton et al. Full thermoelectric characterization of stoichiometric electrodeposited thin film tin selenide (SnSe)
Lee et al. Enhanced seebeck coefficients of thermoelectric Bi2Te3 nanowires as a result of an optimized annealing process
Wang et al. Universal and solution-processable precursor to bismuth chalcogenide thermoelectrics
Wang et al. Phosphine-free synthesis and characterization of cubic-phase Cu2SnTe3 nanocrystals with optical and optoelectronic properties
Proenca et al. Tailoring Bi-Te based nanomaterials by electrodeposition: Morphology and crystalline structure
Kuleshova et al. Optimization of the electrodeposition process of high-performance bismuth antimony telluride compounds for thermoelectric applications
Sharifi et al. Thermoelectricity enhanced electrocatalysis
Jung et al. Synergistically improved thermoelectric energy harvesting of edge-oxidized-graphene-bridged N-type bismuth telluride thick films
Wu et al. High Thermoelectric Performance and Ultrahigh Flexibility Ag2S1–x Se x film on a Nylon Membrane
Feng et al. Ag Interstitial Inhibition and Phonon Scattering at the ZnSe Nano-Precipitates to Enhance the Thermoelectric Performance of Ag2Se
Li et al. Full-electrochemical construction of high-performance polypyrrole/tellurium thermoelectrical nanocomposites
Maji et al. Wearable Thermoelectric Devices Based on Three-Dimensional PEDOT: Tosylate/CuI Paper Composites
Huang et al. Few-layer thin-film metallic glass-enhanced optical properties of ZnO nanostructures