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Li et al., 2008 - Google Patents

The influence of undoped GaN surface flatness on the properties of the blue light-emitting diode wafer

Li et al., 2008

Document ID
4032721572285298728
Author
Li S
Cao J
Fan G
Zhang Y
Zheng S
Sun H
Su J
Publication year
Publication venue
Semiconductor science and technology

External Links

Snippet

We have studied the properties of blue-LED wafers grown on GaN with similar dislocation density and different surface flatness. Results indicate that the smooth surface morphology of the undoped GaN layer leads to better layer periodicity in multiple quantum well (MQW) …
Continue reading at iopscience.iop.org (other versions)

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