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Henriksson et al., 2019 - Google Patents

Click Coupling Reactions on Flat and Nanostructured Hydrogen‐Passivated Silicon Surfaces

Henriksson et al., 2019

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Document ID
4029883325204612159
Author
Henriksson A
Hoffmann H
Publication year
Publication venue
physica status solidi (a)

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Snippet

Dialkynes are grafted onto hydrogen‐passivated silicon wafers, porous silicon, and silicon nanowires via thermally induced hydrosilylation followed by surface functionalization via azide alkyne cycloaddition. The surfaces are characterized with Fourier transform infrared …
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Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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