Quad path, CG-CS resistive feedback LNA architecture for 25–35 GHz band
In this paper, a Quad Path Noise Cancellation (QPNC) Low Noise Amplifier (LNA)presented for 5G sub-band 25-35GHz using GPDK 45 nm Complementary Metal Oxide Semiconductor (CMOS) technology; which is composed of Common Source (CS) & ...
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Highlights
- QPNC LNA designed for 25-35GHz using CS and CG stages with resistive feedback and current reuse.
Using water structuring by ions to address pattern loading in wet HF-based oxide recess etch
- Guy Vereecke,
- Hanne De Coster,
- Denis Dochain,
- Kunsulu Nurekeyeva,
- Shona Conlan,
- Anthony Nsimba,
- Kurt Wostyn,
- Efrain Altamirano Sanchez
In the FinFET fabrication flow, a gap fill oxide is used to fill the space between the Si fins that needs to be recessed to define the height of the fin trench. However, with the used flowable chemical vapor deposition (FCVD) oxide, ...
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Highlights
- Ions proposed by Marcus (2009) for bulk solutions could be used to modulate water structuring in nanotrenches.
Etching mechanism of high-aspect-ratio array structure
- Gao Zhiting,
- Ma Zhuang,
- Gao Lihong,
- Liu Qiang,
- Wang Yuxiang,
- Liu Yanbo,
- Wang Lidong,
- Hao Yuyang,
- Deng Yuanhan
Through-Silicon-Via (TSV) is an significant technology that is being widely employed in micro-electro-mechanical system (MEMS) manufactories. However, it is remain challenging to obtain a deep silicon etching with vertical-angle and ...
Highlights
- The sidewall angle of the array structure becomes increasingly slanted while raising chamber pressure from 2 to 15 Pa.
Low temperature, highly stable ZnO thin-film transistors
- Rodolfo A. Rodriguez-Davila,
- Richard A. Chapman,
- Zeshaan H. Shamsi,
- S.J. Castillo,
- Chadwin D. Young,
- Manuel A. Quevedo-Lopez
A low-temperature and straightforward fabrication process for ZnO thin-film transistors (TFTs) with near-zero aging and negligible instability enabled by using an ultrathin oxide as a top-passivation layer is demonstrated. The process ...
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Highlights
- Low-temperature and simple fabrication process for ZnO thin-film transistors with reduced instability after electrical stress.
Stress measurement based on magnetic Barkhausen noise for thin films
Non-destructive testing methods based on magnetic Barkhausen noise (MBN) are expected to be applied to thin films. Recently, MBN analysis using machine learning has been performed on bulk materials and used as an in-situ stress and ...
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Highlights
- The feasibility of evaluating stress in thin films using magnetic Barkhausen noise (MBN) is presented for the first time.
Review on fabrication, characterization, and applications of porous anodic aluminum oxide films with tunable pore sizes for emerging technologies
Anodizing aluminum allowed the production of one-of-a-kind porous anodic aluminum oxide (PAAO) films. These films have a perfectly flat barrier layer and an exceedingly porous structure. Because of its one-of-a-kind optical and ...
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Highlights
- Unique properties of nanoporous anodic aluminum oxide (AAO).
- Wide range of ...
Fabrication of curved MLA-grating based on 3D printing mold and vacuum-assisted deformation replication process
The combination of Microlens Array (MLA) with a grating structure is an effective means of improving light shaping efficiency due to the light dispersion effects of both elements. This paper proposes an innovative method for ...
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Highlights
- An innovative curved MLA-Grating fabrication approach is proposed.
- The Grating ...
Graphene-based physical sensors for humidity, temperature and strain detections
Recently, graphene has emerged as a promising electrode material for various flexible electronics considering its excellent electrical conductivity, high surface area, thermal conductivity, flexibility and mechanical strength. Based on ...
Highlights
- Physical sensors are used in a wide range of applications.
- The manufacturing ...
Design and characterization of an accelerometer with low cross axis sensitivity
An out-of-plane capacitive accelerometer with low cross axis sensitivity at high accelerations based on a CMOS MEMS process is developed. A truss frame with a high ratio of in-plane stiffness to out-of-plane stiffness is designed to ...
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Highlights
- A single axis accelerometer with low cross-axis sensitivity was developed.
- ...
Performance comparison of vertically stacked nanosheet CFET and standard CMOS without and with parasitic channels
The threshold voltage regulation and the effect of parasitic channels are important issues in CFET. In this paper, the characteristics of the complementary field-effect transistor (CFET) were simulated based on a self-aligned ...
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Highlights
- The threshold voltage of pFET is adjusted to match nFET by the work function metal, which can obtain a good VTC. (In reality, usually different WF metals are ...
Dynamical analysis of a novel chaotic system and its application to image encryption
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Highlights
- A new type of chaotic system is constructed based on the Lorenz-Haken equation.
This study presents a novel four-dimensional chaotic system derived from the Lorenz-Haken equation. The paper investigates the system’s dissipative properties, equilibrium point, Poincaré map, 0–1 test, Lyapunov exponent, complexity, ...