The vacuum channel transistor has emerged as a promising candidate for next-generation technology due to its intriguing features compared to the conventional field effect transistor. Nanoscale vacuum channel transistors have a particular ...

• Emerging Technology: Vacuum channel transistors are a promising candidate for next-generation technology, offering advantages such as vacuum-like ballistic transport, radiation insensitivity, and nanoscale dimensions.
• Historical ...

Design-Technology Co-Optimization (DTCO) can be significantly accelerated by employing Neural Compact Models (NCMs). However, the effective deployment of NCMs requires a substantial amount of training data for accurate device modeling. This paper ...

In recent years, the requirement for greater scalability of transistor technology for the continuation of Moore’s law has led researchers toward the investigations of several innovative advanced semiconductor device as potentially superior ...

In this study, we proposed a novel multi-bit content addressable memory (MCAM) cell based on one single double-gated ferroelectric-gate FET (DG-FeFET). Baseline DG-FeFET has been modeled, and the parameters are calibrated with experimental ...

• Proposed a novel multi-bit content addressable memory (MCAM) cell based on one single double-gated ferroelectric-gate FET.
• Corresponding writing and searching operations are investigated in detail by the TCAD Sentaurus model.
• Boost ...

A new high-performance exclusive OR/exclusive NOR (XOR/XNOR) architecture with ten transistors is proposed in this work. Our research focused on implementing a hybrid exclusive OR/exclusive NOR circuit to achieve high performance, good driving ...

Silicon quantum dots (QDs) are essential physical carriers of quantum bits (qubits) in quantum computing. However, their extremely small size renders them highly sensitive to both the fabrication process and surrounding environment. Accuracy and ...

This manuscript presents the analytical model of a novel biosensor called Graded JAM Split Gate-All-Around (GJAM-SGAA) Bio-FET for the detection of Avian Influenza antibody and DNA. The GJAM-SGAA Bio-FET utilizes a silicon Gate-All-Around FET ...

Electrostatic discharge (ESD) can cause malfunction or failure of integrated circuits (ICs). On-chip ESD protection design is a major IC design-for-reliability (DfR) challenge, particularly for complex chips made in advanced technology nodes. Traditional ...

This paper comprehensively investigates a dielectric modulated Ge/Si interfaced label free nanowire BIOFET for biomolecules detection. The main highlight of this work is the structural novelty in nanowire BIOFET which is integrated ...

This work investigates the low-frequency noise performance of a 2H-type monolayer/bilayer molybdenum ditelluride (MoTe₂) double-gate MOSFET. A hybrid simulation technique involving both QuantumWise ATK and Sentaurus TCAD tools has been used to ...

The threshold voltage regulation and the effect of parasitic channels are important issues in CFET. In this paper, the characteristics of the complementary field-effect transistor (CFET) were simulated based on a self-aligned ...

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• The threshold voltage of pFET is adjusted to match nFET by the work function metal, which can obtain a good VTC. (In reality, usually different WF metals are ...

Fluorocarbon dry etching of vertical silica-based structures is essential to the fabrication of advanced complementary metal-oxide-semiconductor and dynamic random access memory devices. However, the development of etching technology is challenged ...${\mathrm{}}_{\mathrm{}}$$$${\mathrm{}}_{\mathrm{}}{\mathrm{}}_{\mathrm{}}{\mathrm{}}_{\mathrm{}}$

We propose a new formulation of the Wigner transport equation (WTE) with infinite correlation length. Since the maximum correlation length is not limited to a finite value, there is no uncertainty in the simulation results owing to the finite ...

This paper presents for the first time an analytical model of a dielectric modulated surrounding-triple-gate MOSFET with a germanium source-based biosensor, which shows excellent improvement in sensitivity when compared to a silicon source. The ...

In this work, the performance evaluation of a dual stack hetero-gated pocket modulated tunnel FET (DSHGPM-TFET) based biosensor is presented. In the proposed device, cavity is formed by etching a portion of gate metal on both side of ...

We present a predictive process design kit (PDK) for the 5 nm technology node, the ASAP5 PDK. ASAP5 is not related to a particular foundry and the assumptions are derived from literature. It incorporates several innovations that the ...

• Gate-on-drain length in npn TFET is similar to gate-drain underlap in pin TFET.

This article reports an architecture of a silicon-on-insulator (SOI) tunnel field effect transistor (TFET) possessing an n-p-n body, where the two p-n junctions serve as the primary tunneling sites. The p-type source region is elevated ...

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We use the superposition method to model the electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunneling field-effect transistor (TFET). The heterojunction is formed from Ge/Si material in the source/channel, ...

In this paper, we simulate the electrical characteristics of the n-type metal-oxide-semiconductor (NMOS) transistor in a 65-nm complementary metal-oxide-semiconductor (CMOS) inverter under the actions of heavy ions with different linear energy ...

Fin Field-Effect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. Despite demonstrating ...