research-article

A Comparative Cross-layer Study on Racetrack Memories: Domain Wall vs Skyrmion

Authors:

Youguang Zhang,

Weisheng ZhaoAuthors Info & Claims

ACM Journal on Emerging Technologies in Computing Systems (JETC), Volume 16, Issue 1

Article No.: 2, Pages 1 - 17

https://doi.org/10.1145/3333336

Published: 03 October 2019 Publication History

Abstract

Racetrack memory (RM), a new storage scheme in which information flows along a nanotrack, has been considered as a potential candidate for future high-density storage device instead of hard disk drive (HDD). The first RM technology, which was proposed in 2008 by IBM, relies on a train of opposite magnetic domains separated by domain walls (DWs), named DW-RM. After 10 years of intensive research, a variety of fundamental advancements has been achieved; unfortunately, no product has been available until now. With increasing effort and resources dedicated to the development of DW-RM, it is likely that new materials and mechanisms will soon be discovered for practical applications. However, new concepts might also be on the horizon. Recently, an alternative information carrier, magnetic skyrmion, which was experimentally discovered in 2009, has been regarded as a promising replacement of DW for RM, named skyrmion-based RM (SK-RM). Intensive effort has been involved and amazing advances have been made in observing, writing, manipulating, and deleting individual skyrmions. So, what is the relationship between DW and skyrmion? What are the key differences between DW and skyrmion, or between DW-RM and SK-RM? What benefits could SK-RM bring and what challenges need to be addressed before application? In this review article, we intend to answer these questions through a comparative cross-layer study between DW-RM and SK-RM. This work will provide guidelines, especially for circuit and architecture researchers on RM.

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Digital Library

Cited By

Bereholschi LYayla MChen JChen KAli Khan A(2025)Evaluating the Impact of Racetrack Memory Misalignment Faults on BNNs PerformanceEmbedded Computer Systems: Architectures, Modeling, and Simulation10.1007/978-3-031-78377-7_16(230-245)Online publication date: 28-Jan-2025
https://doi.org/10.1007/978-3-031-78377-7_16
Caglayan RMogulkoc AMogulkoc YModarresi MRudenko A(2024) Dzyaloshinskii-Moriya interaction and nontrivial spin textures in the Janus semiconductor monolayers Physical Review B10.1103/PhysRevB.110.094440110:9Online publication date: 27-Sep-2024
https://doi.org/10.1103/PhysRevB.110.094440
Hsieh YHuang PChang YChen BKang WShih W(2023)Granularity-Driven Management for Reliable and Efficient Skyrmion Racetrack MemoriesIEEE Transactions on Emerging Topics in Computing10.1109/TETC.2022.317180411:1(95-111)Online publication date: 1-Jan-2023
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Index Terms

A Comparative Cross-layer Study on Racetrack Memories: Domain Wall vs Skyrmion
1. Hardware
  1. Emerging technologies
    1. Spintronics and magnetic technologies
  2. Integrated circuits
    1. Semiconductor memory
      1. Non-volatile memory

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Published In

cover image ACM Journal on Emerging Technologies in Computing Systems

ACM Journal on Emerging Technologies in Computing Systems Volume 16, Issue 1

January 2020

232 pages

ISSN:1550-4832

EISSN:1550-4840

DOI:10.1145/3365593

Editor:
Ramesh Karri
Polytechnic Institute of New York University, USA

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Copyright © 2019 ACM.

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Publication History

Published: 03 October 2019

Accepted: 01 May 2019

Revised: 01 March 2019

Received: 01 November 2018

Published in JETC Volume 16, Issue 1

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Cited By

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https://doi.org/10.1007/978-3-031-78377-7_16
Caglayan RMogulkoc AMogulkoc YModarresi MRudenko A(2024) Dzyaloshinskii-Moriya interaction and nontrivial spin textures in the Janus semiconductor monolayers Physical Review B10.1103/PhysRevB.110.094440110:9Online publication date: 27-Sep-2024
https://doi.org/10.1103/PhysRevB.110.094440
Hsieh YHuang PChang YChen BKang WShih W(2023)Granularity-Driven Management for Reliable and Efficient Skyrmion Racetrack MemoriesIEEE Transactions on Emerging Topics in Computing10.1109/TETC.2022.317180411:1(95-111)Online publication date: 1-Jan-2023
https://doi.org/10.1109/TETC.2022.3171804
Xu RSha EZhuge QSong YWang HShi L(2023)Optimizing Data Placement for Hybrid SRAM+Racetrack Memory SPM in Embedded SystemsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2022.318554842:3(847-859)Online publication date: Mar-2023
https://doi.org/10.1109/TCAD.2022.3185548
Venkat GAllwood DHayward T(2023)Magnetic domain walls: types, processes and applicationsJournal of Physics D: Applied Physics10.1088/1361-6463/ad056857:6(063001)Online publication date: 10-Nov-2023
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Yasuda THoriuchi TSuemasu T(2023)Fabrication of highly oriented Mn4N/Pt epitaxial bilayer structure on MgO(001) for spintronics applicationsAIP Advances10.1063/5.016579113:10Online publication date: 16-Oct-2023
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Li SLin XLi PZhao SSi ZWei GKoopmans BLavrijsen RZhao W(2023)Ultralow Power and Shifting-Discretized Magnetic Racetrack Memory Device Driven by Chirality Switching and Spin CurrentACS Applied Materials & Interfaces10.1021/acsami.3c06447Online publication date: 15-Aug-2023
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Orlov VIvanov AOrlova IPatrin G(2022)The Drift of Magnetic Vortices in a Random Field of Anchoring CentersIEEE Transactions on Magnetics10.1109/TMAG.2022.316000858:5(1-10)Online publication date: May-2022
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Chang JChen T(2022)When B-Tree Meets Skyrmion Memory: How Skyrmion Memory Affects an Indexing SchemeIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2022.319751941:11(3814-3825)Online publication date: 1-Nov-2022
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