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Modeling of integrated circuit defect sensitivities

Published: 01 November 1983 Publication History

Abstract

Until now only cursory descriptions of mathematical models for defect sensitivities of integrated circuit chips have been given in the yield literature. This paper treats the fundamentals of the defect models that have been used successfully at IBM for a period of more than fifteen years. The effects of very small defects are discussed first. The case of photolithographic defects, which are of the same dimensions as the integrated circuit device and interconnection patterns, is dealt with in the remainder of the paper. The relationships between these models and test sites are described. Data from measurements of defect sizes are discussed.

References

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C. H. Stapper, A. N. McLaren, and M. Dreckmann, "Yield Model for Productivity Optimization of VLSI Memory Chips with Redundancy and Partially Good Product," IBM J. Res. Develop. 24, 398-409 (May 1980).
[2]
C. H. Stapper, "Comments on Some Considerations in the Formulation of IC Yield Statistics," Solid-State Electron. 24, 127-132 (February 1981).
[3]
C. H. Stapper, F. Armstrong, and K. Saji, "Integrated Circuit Yield Statistics," Proc. IEEE 71, 453-470 (April 1983).
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A. P. Turley and D. S. Herman, "LSI Yield Projections Based Upon Test Pattern Results: An Application to Multilevel Metal Structures," IEEE Trans. Parts, Hybrids. Packaging PHP-10, 230-234 (December 1974).
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B. T. Murphy, "Cost-Size Optima of Monolithic Integrated Circuits," Proc. IEEE 52, 1537-1545 (December 1964).
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R. B. Seeds, "Yield, Economic, and Logistical Models for Complex Digital Arrays," 1967 IEEE International Convention Record, Part 6, April 1967, pp. 60-61.
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R. B. Seeds, "Yield and Cost Analysis of Bipolar LSI," Proceedings, 1967 IEEE International Electron Device Meeting Keynote Session (Abstract, p. 12 of the meeting record), October 1967.
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G. E. Moore, "What Level of LSI is Best for You?" Electronics 43, 126-230 (February 16, 1970).
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C. H. Stapper, "Defect Density Distribution for LSI Yield Calculations," IEEE Trans. Electron Devices ED-20, 655-657 (July 1973).
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O. Paz and T. R. Lawson, Jr., "Modification of Poisson Statistics: Modeling Defects Induced by Diffusion," IEEE J. Solid State Circuits SC-12, 540-546 (October 1977).
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C. H. Stapper, P. P. Castrucci, R. A. Maeder, W. E. Rowe, and R. A. Verhelst, "Evolution and Accomplishments of VLSI Yield Management at IBM," IBM J. Res. Develop. 26, 532-545 (September 1982).
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C. H. Stapper, "Yield Model for 256K RAMs and Beyond," Digest of Papers, 1983 International Solid State Circuits Conference, February 1982, pp. 12-13.

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    Published In

    cover image IBM Journal of Research and Development
    IBM Journal of Research and Development  Volume 27, Issue 6
    November 1983
    77 pages

    Publisher

    IBM Corp.

    United States

    Publication History

    Published: 01 November 1983
    Received: 20 May 1983

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