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An overview of materials and process aspects of Josephson integrated circuit fabrication

Author:

I. AmesAuthors Info & Claims

IBM Journal of Research and Development, Volume 24, Issue 2

Pages 188 - 194

https://doi.org/10.1147/rd.242.0188

Published: 01 March 1980 Publication History

Abstract

Presented here is an overview of materials and process aspects of a method that has been developed for fabricating experimental integrated circuits containing Josephson junctions as active elements. Superconducting Pb-alloy thin films are used for forming the junction electrodes, and a combination of thermal and rf oxidation is used for forming the tunnel barrier oxides. In addition to the junctions, the circuits, which are formed above an insulated, superconducting Nb ground plane, also contain: superconducting Pb-alloy lines, contacts, and transformers; AuIn₂, damping and terminating resistors; insulated crossings; etc. Insulation between the ground plane and overlying conducting layers is achieved through use of a combination of Nb₂O₅, and SiO. The latter is also used to achieve insulation between overlying conducting layers and as a final protective coating. Photoresist processes are used for layer patterning.

References

[1]

J. H. Greiner et al., IBM J. Res. Develop. 24 (1980, this issue).

Digital Library

[2]

J. H. Greiner, S. Basavaiah, and I. Ames, J. Vac. Sci. Technol. 11, 81 (1974).

[3]

J. Matisoo, IBM J. Res. Develop. 24 (1980, this issue).

Digital Library

[4]

R. F. Broom, R. Jaggi, Th. O. Mohr, and A. Oosenbrug, IBM J. Res. Develop. 24 (1980, this issue).

[5]

A. F. Hebard and R. H. Eick, J. Appl. Phys. 49, 339 (1978).

[6]

R. H. Havermann, C. A. Hamilton, and R. E. Harris, J. Vac. Sci. Technol. 15, 392 (1978).

[7]

K. Kuroda, T. Waho, H. Yamada, and A. Ishida, Jpn. J. Appl. Phys. 18, 189 (1979).

[8]

W. Anacker, IBM J. Res. Develop. 24 (1980, this issue).

Digital Library

[9]

H. C. Jones, D. J. Herrell, and Y. L. Yao, IEEE Trans. Magnetics MAG-15, 432 (1979).

[10]

L. M. Geppert, J. H. Greiner, D. J. Herrell, and S. P. Klepner, IEEE Trans. Magnetics MAG-15, 412 (1979).

[11]

S. K. Lahiri, Thin Solid Films 41, 209 (1977).

[12]

C. J. Kircher and S. K. Lahiri, IBM J. Res. Develop. 24 (1980, this issue).

Digital Library

[13]

T. R. Gheewala, Appl. Phys. Lett. 34, 670 (1979).

[14]

I. Ames, M. F. Gendron, and H. Seki, Transactions of the Ninth Vacuum Symposium, The Mac-Millan Company, New York, 1962, p. 133.

[15]

J. Matisoo, Proc. IEEE 55, 172 (1967).

[16]

M. Hatzakis, J. Electrochem. Soc. 116, 1033 (1969).

[17]

K. Grebe, I. Ames, and A. Ginzberg, J. Vac. Sci. Technol. 11, 458 (1974).

[18]

A. Warnecke, R. M. Patt, and C. J. Johnson, Jr., Kodak Microelectronics Seminar Proceedings (INTERFACE '77), Eastman Kodak Company, Rochester, NY, 1978, p. 145.

[19]

B. J. Canavello, M. Hatzakis, and J. M. Shaw, IBM Tech. Disclosure Bull. 19, 4048 (1977).

[20]

R. F. Broom, R. B. Laibowitz, Th. O. Mohr, and W. Walter, IBM J. Res. Develop. 24 (1980, this issue).

[21]

S. Basavaiah and J. H. Greiner, J. Appl. Phys. 47, 4201 (1976).

[22]

H. L. Caswell, P. Chaudhari, C. J. Kircher, R. B. Laibowitz, S. I. Raider, and C. C. Tsuei, IBM Tech. Disclosure Bull. 20, 4135 (1978).

[23]

R. E. Howard, D. A. Rudman, and M. R. Beasley, Appl. Phys. Lett. 33, 671 (1978).

[24]

J. T. C. Yeh and C. C. Tsuei, IEEE Trans. Magnetics MAG-15, 591 (1979).

[25]

M. Murakami, Acta. Met. 26, 175 (1978).

[26]

M. Murakami, Thin Solid Films 55, 101 (1978).

[27]

M. Murakami and T. S. Kuan, Thin Solid Films, accepted for publication.

[28]

W. Anacker, K. R. Grebe, J. H. Greiner, S. K. Lahiri, K. C. Park, and H. Zappe, U.S. Patent 3,733,526, 1973.

[29]

S. K. Lahiri, Thin Solid Films 28, 279 (1975).

[30]

D. R. Campbell, K. N. Tu, and R. E. Robinson, Acta. Met. 24, 609 (1976).

[31]

S. K. Lahiri, J. Vac. Sci. Technol. 13, 148 (1976).

[32]

S. Basavaiah and J. H. Greiner, J. Appl. Phys. 48, 4630 (1977).

[33]

S. K. Lahiri and S. Basavaiah, J. Appl. Phys. 49, 2880 (1978).

[34]

H. L. Caswell, J. R. Priest, and Y. Budo, J. Appl. Phys. 34, 3261 (1963).

[35]

M. Murakami, Thin Solid Films 59, 105 (1979).

[36]

M. Murakami and C. J. Kircher, IEEE Trans. Magnetics MAG-15, 443 (1979).

[37]

S. Basavaiah, M. Murakami, and C. J. Kircher, J. de Physique 40, C6-1247 (1978).

[38]

S. K. Lahiri, IBM Tech. Disclosure Bull. 21, 3403 (1979).

[39]

J. M. Baker, C. J. Kircher, and J. W. Matthews, IBM J. Res. Develop. 24 (1980, this issue).

Digital Library

[40]

S. Basavaiah, K. R. Grebe, J. H. Greiner, S. K. Lahiri, and A. Scott, IBM Tech. Disclosure Bull. 17, 3488 (1975).

Cited By

Greiner JKircher CKlepner SLahiri SWarnecke ABasavaiah SYen EBaker JBrosious PHuang HMurakami MAmes I(1980)Fabrication process for Josephson integrated circuitsIBM Journal of Research and Development10.1147/rd.242.019524:2(195-205)Online publication date: 1-Mar-1980
https://dl.acm.org/doi/10.1147/rd.242.0195

An overview of materials and process aspects of Josephson integrated circuit fabrication
1. Hardware
  1. Electronic design automation
2. Networks
  1. Network types
    1. Ad hoc networks

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Published In

cover image IBM Journal of Research and Development

IBM Journal of Research and Development Volume 24, Issue 2

March 1980

146 pages

ISSN:0018-8646

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IBM Corp.

United States

Publication History

Published: 01 March 1980

Received: 23 May 1979

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Cited By

Greiner JKircher CKlepner SLahiri SWarnecke ABasavaiah SYen EBaker JBrosious PHuang HMurakami MAmes I(1980)Fabrication process for Josephson integrated circuitsIBM Journal of Research and Development10.1147/rd.242.019524:2(195-205)Online publication date: 1-Mar-1980
https://dl.acm.org/doi/10.1147/rd.242.0195

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