Dynamic Random Access Memory (DRAM) cells rely on periodic refresh operations to maintain data integrity. As the capacity of DRAM memories has increased, so has the amount of time consumed in doing refresh. Refresh operations contend with read ...
Phase-Change Memory (PCM) technology has received substantial attention recently. Because PCM is byte-addressable and exhibits access times in the nanosecond range, it can be used in main memory designs. In fact, PCM has higher density and lower idle ...
Ever-increasing demands for main memory bandwidth and memory speed/power tradeoff led to the introduction of memories with multiple memory channels, such as Wide IO DRAM. Efficient utilization of a multichannel memory as a shared resource in ...
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