Process Variations and Noise Analysis on a Miller Capacitance Tuned 1.8_2.4-GHz Dual-Band Low Noise Amplifier

This paper describes an inductively source degenerated dual-band low noise amplifier (LNA) designed in a standard CMOS 0.18 µm TSMC process. The dual-band LNA can be tuned to 1.8-GHz and 2.4-GHz. The impedance matching is obtained at the required ...

This paper presents a 2.4/5.2/5.8 GHz, triple-band, common-gate, cascode CMOS low-noise amplifier using only a band-selection switch that alters the equivalent LC tank and thus the resonant frequencies of the tank. The aspect ratio of the cascode MOS ...

The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits a very challenging task. A low noise transconductance amplifier (LNTA) in 130 nm CMOS technology that operates between 1 and 6 GHz is ...