Quantum size effects and transport phenomena in thin Bi layers
Authors: 
E. I. Rogacheva, S. G. Lyubchenko, O. N. Nashchekina, A. V. Meriuts, M. S. DresselhausAuthors Info & Claims
Pages 728 - 730
Abstract
For thin Bi films with thicknesses d=10-60nm the dependences of the Hall coefficient, Seebeck coefficient, electrical conductivity, and Hall carrier mobility on d have been obtained at room temperature. Distinct oscillations of the transport properties with period @Dd=(5+/-1)nm have been observed in the thickness range d=25-60nm and attributed to quantization of the energy spectrum of holes. It has been suggested that a deep minimum observed in the thickness dependences of the kinetic coefficients at d~25nm is connected with the manifestation of the electronic spectrum quantization and/or manifestation of a semimetal-semiconductor transition. The experimental data are in good agreement with the results of theoretical calculations.
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- Quantum size effects and transport phenomena in thin Bi layers
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Published: 01 April 2009
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