research-article

Low-power ternary content-addressable memory design based on a voltage self-controlled fin field-effect transistor segment

Authors:

Yu-Cheng Cheng,

Meng-Rong LuAuthors Info & Claims

Volume 81, Issue C

https://doi.org/10.1016/j.compeleceng.2019.106528

Published: 01 January 2020 Publication History

Abstract

Ternary content-addressable memory (TCAM) is a popular component to use for fast and parallel data searching. However, with technology downscaling, TCAM consumes huge leakage power, which affects search performance. To control TCAM's leakage power consumption, this paper proposes a multiple-segment voltage self-controlled TCAM (VoSCT) that varies the back-gate voltages of fin field-effect transistors and the supply voltages of a TCAM entry. In the VoSCT, a TCAM entry is partitioned into several segments, and each segment operates in one of the three following modes: high-speed mode, low-power mode, and ultra-low-power mode. Examples that use a real routing table are employed to verify the feasibility of the proposed VoSCT, and the experimental results indicate that 38% of leakage power and 21% of total power can be reduced with only a 9% search delay increase and 4% area overhead increase compared with the traditional TCAM design.

References

[1]

S. Baeg, Low-power ternary content-addressable memory design using a segmented match line, IEEE Trans Circuits Syst Regul Pap 55 (6) (2008) 1485–1494. July.

[2]

Y.C. Cheng, J.H. Chen, T.C. Wu, Y.J. Chang, Low leakage mask vertical control TCAM for network router, in: Proc. IEEE Asia Pacific conference on circuits and systems (APCCAS), Oct, 2016, pp. 469–472.

[3]

Y.J. Chang, Y.H. Liao, Hybrid-Type CAM Design for both power and performance efficiency, IEEE Trans Very Large Scale Integr VLSI Syst 16 (8) (2008) 965–974. Aug.

[4]

K.L. Tsai, Y.J. Chang, Y.C. Cheng, Automatic charge balancing content addressable memory with self-control mechanism, IEEE Trans Circuits Syst Regul Pap 61 (10) (2014) 2834–2841. Oct.

[5]

A. Agarwal, S. Hsu, S. Mathew, M. Anders, H. Kaul, F. Sheikh, R. Krishnamurthy, A 128×128b high-speed wide-AND match-line content addressable memory in 32nm CMOS, in: Proc. IEEE European solid-state circuits conference (ESSCIRC), Sep., 2011, pp. 83–86.

[6]

Y.J. Chang, K.L. Tsai, H.J. Tsai, Low leakage TCAM for IP lookup using two-side self-gating, IEEE Trans Circuits Syst Regul Pap 60 (6) (2013) 1478–1486. June.

[7]

S.A. Tawfik, V. Kursun, Low power and stable FinFET SRAM with static independent gate bias for enhanced integration density, in: Proc. IEEE international conference on electronics, circuits and systems (ICECS), Dec., 2007, pp. 443–446.

[8]

M.C. Chang, K.L. He, Y.C. Wang, Design of asymmetric TCAM (Ternary Content-Addressable Memory) Cells Using FinFET, in: Proc. IEEE 3rd global conference on consumer electronics (GCCE), Oct., 2014, pp. 358–359.

[9]

Semiconductor Industry Association, International Technology Roadmap for Semiconductors (ITRS), 2015[Online]. Available:http://www.itrs2.net/.

[10]

Y. Cao, What is Predictive Technology Model (PTM)?, ACM SIGDA Newslett 39 (3) (2009) March.

[11]

[Online] BGP Routing Table Analysis Report. Available:http://bgp.potaroo.net.

[12]

M. Zackriya V, H.M. Kittur, Precharge-free, low-power content-addressable memory, IEEE Trans Very Large Scale Integr VLSI Syst 24 (8) (2016) 2614–2621. Aug.

[13]

M. Zackriya V, H.M. Kittur, Content addressable memory—early predict and terminate precharge of match-line, IEEE Trans Very Large Scale Integr VLSI Syst 25 (1) (2017) 385–387. Jan.

[14]

S.G. Ahn, K.W. Kwon, Local NOR and global NAND match-line architecture for high performance CAM, in: Proc. of IEEE international midwest symposium on circuits and systems (MWSCAS), Aug., 2017, pp. 707–710.

[15]

S. Jeloka, N.B. Akesh, D. Sylvester, D. Blaauw, A 28 nm configurable memory (TCAM/BCAM/SRAM) using push-rule 6T bit cell enabling logic-in-memory, IEEE J Solid-State Circuits 51 (4) (2016) 1009–1021. April.

[16]

T.S. Chen, D.Y. Lee, T.T. Liu, A.Y. Wu, Dynamic reconfigurable ternary content addressable memory for OpenFlow-compliant low-power packet processing, IEEE Trans Circ Syst–I 63 (10) (2016) 1661–1672. Oct.

[17]

T. Mishra, S. Sahni, PETCAM-A power Efficient TCAM for forwarding tables, in: Proc. of IEEE symposium on computers and communications (ISCC), 2009, 5-8 July.

[18]

J. Zhang, S. Zheng, F. Teng, Q. Ding, X. Chen, An OR-type cascaded match line scheme for high-performance and EDP-efficient ternary content addressable memory, in: Proc. of IEEE nordic circuits and systems conference (NORCAS), 2016, pp. 1–6. Nov.

[19]

T.S. Chen, D.Y. Lee, T.T. Liu, A.Y. Wu, Filter-based dual-voltage architecture for low-power long-word TCAM Design, in: Proc. of international conference on intelligent green building and smart grid, 2016, pp. 1–5. June.

[20]

W. Choi, K. Lee, J. Park, Low cost ternary content addressable memory using adaptive matchline discharging scheme, in: Proc. of IEEE international symposium on circuits and systems (ISCAS), 2018, pp. 1–4. May.

[21]

I. Arsovski, A. Patil, R.M. Houle, M.T. Fragano, R. Rodriguez, R. Kim, V. Butler, 1.4Gsearch/s 2-Mb/mm2 TCAM using two-phase-pre-charge ML sensing and power-grid pre-conditioning to reduce Ldi/dt power-supply noise by 50%, IEEE J Solid-State Circ 53 (1) (2018) 155–163. Jan.

[22]

Y.J. Chang, K.L. Tsai, H.J. Tsai, Low leakage TCAM for IP lookup using two-side self-gating, IEEE Trans Circuits Syst Regul Pap 60 (6) (2013) 1478–1486. June.

[23]

M.C. Chang, K.L. He, Design of low-power FinFET-Based TCAMs with unevenly-segmented matchlines for routing table applications, in: Proc. of IEEE international conference on ASIC (ASICON), 2015, pp. 1–4. Nov.

[24]

M. Arulvani, M.M. Ismail, Low power FinFET content addressable memory design for 5G communication networks, Comput Electr Eng 72 (2018) 606–613. Nov.

Index Terms

Low-power ternary content-addressable memory design based on a voltage self-controlled fin field-effect transistor segment
1. Hardware
  1. Hardware validation
  2. Integrated circuits
    1. Semiconductor memory
      1. Dynamic memory

Index terms have been assigned to the content through auto-classification.

Recommendations

Standby and dynamic power minimization using enhanced hybrid power gating structure for deep-submicron CMOS VLSI

Scaling down of CMOS Technology reduces supply voltage which helps evade device botch caused by high electric fields in the conducting channel under the gate and gate oxide. Voltage scaling lessens circuit power consumption but increases delay of logic ...
Certain investigations in achieving low power dissipation for SRAM cell
Abstract
The modern semiconductor industry is evolving quite rapidly. Portable and mobile devices are becoming smaller every day and there is also a growing demand for longer battery power. With these demands it is important for researchers to ...
A design of low swing and multi threshold voltage based low power 12T SRAM cell

Proposed low power 12T MTCMOS based SRAM cell.Display Omitted A novel low power 12T MTCMOS based SRAM cell is proposed.Charge recycling technique used for reducing the current leakage during transition mode.Use voltage sources to reduce the dynamic ...

Comments

Please enable JavaScript to view thecomments powered by Disqus.

Information & Contributors

Information

Published In

cover image Computers and Electrical Engineering

Computers and Electrical Engineering Volume 81, Issue C

Jan 2020

474 pages

ISSN:0045-7906

Issue’s Table of Contents

Elsevier Ltd.

Publisher

Pergamon Press, Inc.

United States

Publication History

Published: 01 January 2020

Author Tags

Qualifiers

Research-article

Contributors

Other Metrics

View Article Metrics

Bibliometrics & Citations

Bibliometrics

Article Metrics

0
Total Citations
0
Total Downloads

Downloads (Last 12 months)0
Downloads (Last 6 weeks)0

Reflects downloads up to 23 Nov 2024

Other Metrics

View Author Metrics

Citations

View Options

View options

Login options

Check if you have access through your login credentials or your institution to get full access on this article.

Full Access

Get this Publication

Media

Figures

Other

Tables

View Issue’s Table of Contents