Comparison of dopants used to control ordering in GaInP
Abstract
Index Terms
- Comparison of dopants used to control ordering in GaInP
Recommendations
A comparison of graphite and AIN caps used for annealing ion-implanted SiC
The SiC wafers implanted with Al were capped with AlN, C, or AlN and C and were annealed at temperatures as high as 1700°C to examine their ability to act as annealing caps. As shown previously, the AlN film was effective up to 1600°C, as it protected ...
Effect of dopants on chemical mechanical polishing of Silicon
In microelectronic manufacturing, chemical mechanical polishing (CMP) of silicon is becoming a more and more important process. This work investigates the effect of dopants on CMP of silicon. A high boron concentration is found to reduce the removal ...
Effect of Si doping on the photoluminescence properties of AlGaInP/GaInP multiple quantum wells
The influence of Si doping on the photoluminescence (PL) properties of (Al"0"."3Ga"0"."7)"0"."5In"0"."5P/Ga"0"."5In"0"."5P multiple-quantum-wells (MQWs) was studied. For the samples without p-type layers, the PL peak wavelength from (Al"0"."3Ga"0"."7)"0"...
Comments
Please enable JavaScript to view thecomments powered by Disqus.Information & Contributors
Information
Published In
Publisher
The Metals, Minerals, and Materials Society
United States
Publication History
Qualifiers
- Article
Contributors
Other Metrics
Bibliometrics & Citations
Bibliometrics
Article Metrics
- 0Total Citations
- 0Total Downloads
- Downloads (Last 12 months)0
- Downloads (Last 6 weeks)0
Other Metrics
Citations
View Options
View options
Login options
Check if you have access through your login credentials or your institution to get full access on this article.
Sign in