Architectural evaluations on TSV redundancy for reliability enhancement
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TSV redundancy: architecture and design issues in 3D IC
DATE '10: Proceedings of the Conference on Design, Automation and Test in Europe3D technology provides many benefits including high density, high band-with, low-power, and small form-factor. Through Silicon Via (TSV), which provides communication links for dies in vertical direction, is a critical design issue in 3D integration. ...
TSV process-induced MOS reliability degradation
2018 IEEE International Reliability Physics Symposium (IRPS)Process-induced planar MOS capacitor reliability degradation is investigated in both via-last and via-middle through-silicon via (TSV) integration flows, with the capacitor electrically connected to the TSV. The leakage current and the breakdown voltage ...
TSV redundancy: architecture and design issues in 3-D IC
3-D technology provides many benefits including high density, high bandwidth, low-power, and small form-factor. Through Silicon Via (TSV), which provides communication links for dies in vertical direction, is a critical design issue in 3-D integration. ...
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European Design and Automation Association
Leuven, Belgium
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