A CMOS Compatible Pyroelectric Mid-Infrared Detector Based on Aluminium Nitride
<p>Quarter cut schematic representation of the pyroelectric detector.</p> "> Figure 2
<p>A section of the measurement configuration, depicting the backside of a detector chip which is mounted in the interface PCB, together with the attached readout PCB and the optical fiber. The optical fiber is approached to the backside of a detector.</p> "> Figure 3
<p>A scheme of the readout circuit for the pyroelectric detector. The modulated radiation that hits the pyroelectric detector leads to a generation of free charges.</p> "> Figure 4
<p>SEM micrograph of a fabricated detector. (<b>a</b>) The bottom-right part of the detector, depicting the different layers, the bottom electrode (doped-Si), the pyroelectric layer (AlN) and the top electrode (AlSiCu) of the detector. Due to difficulties of the AlN patterning, the bottom electrode is covered with grainy residues of AlN. (<b>b</b>) the most left-middle part of the detector, depicting how the top electrode is contacted.</p> "> Figure 5
<p>(<b>a</b>) The area and the lateral length of the various tested detector designs. Both the detector and the membrane are quadratic. (<b>b</b>) The generated current of the investigated detectors when irradiated with a power of <math display="inline"><semantics> <mrow> <mn>11</mn> <mspace width="0.166667em"/> <mi>mW</mi> </mrow> </semantics></math> at a wavelength of <math display="inline"><semantics> <mrow> <mn>4.17</mn> <mspace width="0.166667em"/> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math> and modulated at a frequency of <math display="inline"><semantics> <mrow> <mn>6</mn> <mspace width="0.166667em"/> <mi>Hz</mi> </mrow> </semantics></math>.</p> "> Figure 6
<p>The voltage response of the pyroelectric detector is exposed to modulated infrared radiation <math display="inline"><semantics> <msub> <mi>P</mi> <mn>0</mn> </msub> </semantics></math>. (<b>a</b>) Time domain signals. (<b>b</b>) Frequency domain signals together with a recorded noise signal (i.e., no incident radiation), the <math display="inline"><semantics> <msup> <mi>f</mi> <mrow> <mo>−</mo> <mn>0.53</mn> </mrow> </msup> </semantics></math> decrease in the amplitude corresponds to a PSD dependence in <math display="inline"><semantics> <msup> <mi>f</mi> <mrow> <mo>−</mo> <mn>1.05</mn> </mrow> </msup> </semantics></math>.</p> "> Figure 7
<p>The response of the detector (amplitude at <math display="inline"><semantics> <mrow> <mn>18</mn> <mspace width="0.166667em"/> <mi>Hz</mi> </mrow> </semantics></math>, <math display="inline"><semantics> <msub> <mi>V</mi> <mrow> <mi>S</mi> <mo>,</mo> <mn>18</mn> <mi>Hz</mi> </mrow> </msub> </semantics></math>) as a function of the incident power at <math display="inline"><semantics> <mrow> <mn>18</mn> <mspace width="0.166667em"/> <mi>Hz</mi> </mrow> </semantics></math> (<math display="inline"><semantics> <msub> <mi>P</mi> <mrow> <mn>0</mn> <mo>,</mo> <mn>18</mn> <mi>Hz</mi> </mrow> </msub> </semantics></math>) that was irradiated onto the detector. The fit was conducted using the entire data set shown in the plot. It was also repeated for the specific data associated with each individual configuration, which led to virtually the same result for the response <math display="inline"><semantics> <msub> <mi>R</mi> <mi>V</mi> </msub> </semantics></math> when taking the mean value of the individual results.</p> ">
Abstract
:1. Introduction
2. Design
3. Experimental
3.1. Fabrication of the Detector
3.2. Characterization of the Detector
4. Results and Discussion
5. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Ranacher, C.; Consani, C.; Tortschanoff, A.; Rauter, L.; Holzmann, D.; Fleury, C.; Stocker, G.; Fant, A.; Schaunig, H.; Irsigler, P.; et al. A CMOS Compatible Pyroelectric Mid-Infrared Detector Based on Aluminium Nitride. Sensors 2019, 19, 2513. https://doi.org/10.3390/s19112513
Ranacher C, Consani C, Tortschanoff A, Rauter L, Holzmann D, Fleury C, Stocker G, Fant A, Schaunig H, Irsigler P, et al. A CMOS Compatible Pyroelectric Mid-Infrared Detector Based on Aluminium Nitride. Sensors. 2019; 19(11):2513. https://doi.org/10.3390/s19112513
Chicago/Turabian StyleRanacher, Christian, Cristina Consani, Andreas Tortschanoff, Lukas Rauter, Dominik Holzmann, Clement Fleury, Gerald Stocker, Andrea Fant, Herbert Schaunig, Peter Irsigler, and et al. 2019. "A CMOS Compatible Pyroelectric Mid-Infrared Detector Based on Aluminium Nitride" Sensors 19, no. 11: 2513. https://doi.org/10.3390/s19112513