Photonic Characterisation of Indium Tin Oxide as a Function of Deposition Conditions
<p>Structural and optical analysis methods used on ITO thin films with guided mode resonance grating structures written directly into the films. These are (<b>a</b>) AFM scan, (<b>b</b>) SEM image, (<b>c</b>) TM optical results for four gratings of different periods on a single film and (<b>d</b>) TE and TM relative amplitude values for increasing periods, displaying the effective loss increase with wavelength.</p> "> Figure 2
<p>Oxygen concentration during deposition as a function of conductivity for several variations of oxygen flow. Conductivity measurements were taken after a standardised anneal. A dip in conductivity can be seen at 5%; however, the largest conductivity was measured at a 0% oxygen flow. Error bars are present but are of a small magnitude.</p> "> Figure 3
<p>(<b>a</b>) XRD data for annealed ITO films of 0%, 5% and 20% oxygen flow during the deposition; (<b>b</b>–<b>d</b>) show exemplar FWHM extractions for the respective (222) orientation for 0%, 5% and 20% oxygen flow.</p> "> Figure 4
<p>Simulated values of (<b>a</b>) increasing mobility (<math display="inline"><semantics> <msub> <mi mathvariant="sans-serif">ϵ</mi> <mo>∞</mo> </msub> </semantics></math> = 4.9 and m<math display="inline"><semantics> <msubsup> <mrow/> <mrow> <mi mathvariant="normal">e</mi> </mrow> <mo>*</mo> </msubsup> </semantics></math> = 0.4 m<math display="inline"><semantics> <msub> <mrow/> <mi mathvariant="normal">e</mi> </msub> </semantics></math> kg) and (<b>b</b>) high-frequency permittivity (<math display="inline"><semantics> <mi mathvariant="sans-serif">μ</mi> </semantics></math> = 30 cm<math display="inline"><semantics> <msup> <mrow/> <mn>2</mn> </msup> </semantics></math>/Vs and m<math display="inline"><semantics> <msubsup> <mrow/> <mrow> <mi mathvariant="normal">e</mi> </mrow> <mo>*</mo> </msubsup> </semantics></math> = 0.4 m<math display="inline"><semantics> <msub> <mrow/> <mi mathvariant="normal">e</mi> </msub> </semantics></math> kg) for an ITO film of N = 3 × 10<math display="inline"><semantics> <msup> <mrow/> <mn>20</mn> </msup> </semantics></math> cm<math display="inline"><semantics> <msup> <mrow/> <mrow> <mo>−</mo> <mn>3</mn> </mrow> </msup> </semantics></math>. The ENZ region can be seen to shift to higher wavelengths for increasing values on both plots.</p> "> Figure 5
<p>Real and imaginary dielectric permittivity as a function of wavelength (frequency) for ITO films deposited at: (<b>a</b>) 0%, (<b>b</b>) 5%, (<b>c</b>) 20% and (<b>d</b>) 27% oxygen concentration during deposition. Imaginary permittivity values are plotted for TE polarisation. See <a href="#app1-nanomaterials-13-01990" class="html-app">Supplementary Material, Part 9</a> for more detail, on the chosen wavelength regime.</p> ">
Abstract
:1. Introduction
2. Materials and Methods
3. Results
3.1. ITO Conductivity
3.2. ITO Dispersion
4. Material Parameter Discussion
4.1. Carrier Density, N
4.2. Plasma Frequency,
4.3. Effective Mass,
4.4. High-Frequency Permittivity,
4.5. Collision Frequency,
5. Discussion
6. Conclusions
Supplementary Materials
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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O Gas Flow (%) | Conductivity (S/cm) | Orientation | FWHM (°) | Average Grain Size (nm) |
---|---|---|---|---|
0 | 1260.90 | (222) (440) | 0.246 0.261 | 54.27 |
5 | 20.61 | (222) (440) | 0.291 0.313 | 45.69 |
20 | 56.92 | (222) (440) | 0.361 0.389 | 34.49 |
O Gas Flow (%) | 0 | 5 | 20 | 27 |
---|---|---|---|---|
Sheet Resistance (/Sq) | 38.4 | 1935.2 | 714.2 | 1117.6 |
Conductivity, (S/cm) | 1260.9 | 20.6 | 56.9 | 36.2 |
Carrier Density, N (cm) | 2.77 × 10 | 4.53 × 10 | 1.25 × 10 | 7.96 × 10 |
Electron Mobility, (cm/Vs) | 28.43 | 24.30 | 1.11 | 1.35 |
Plasma Frequency, (rad·THz) | 1376 | 616 | 1351 | 949 |
Electron Effective Mass, m (kg) | 0.51 m | 0.42 m | 0.50 m | 0.50 m |
High-Frequency Permittivity, | 4.31 | 5.30 | 5.42 | 5.33 |
Collision Frequency, (THz) | 147 | 993 | 390 | 1478 |
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Blair, S.F.J.; Male, J.S.; Cavill, S.A.; Reardon, C.P.; Krauss, T.F. Photonic Characterisation of Indium Tin Oxide as a Function of Deposition Conditions. Nanomaterials 2023, 13, 1990. https://doi.org/10.3390/nano13131990
Blair SFJ, Male JS, Cavill SA, Reardon CP, Krauss TF. Photonic Characterisation of Indium Tin Oxide as a Function of Deposition Conditions. Nanomaterials. 2023; 13(13):1990. https://doi.org/10.3390/nano13131990
Chicago/Turabian StyleBlair, Samuel F. J., Joshua S. Male, Stuart A. Cavill, Christopher P. Reardon, and Thomas F. Krauss. 2023. "Photonic Characterisation of Indium Tin Oxide as a Function of Deposition Conditions" Nanomaterials 13, no. 13: 1990. https://doi.org/10.3390/nano13131990