research-article

Making DRAM Stronger Against Row Hammering

Authors:

Sungjoo YooAuthors Info & Claims

DAC '17: Proceedings of the 54th Annual Design Automation Conference 2017

Article No.: 55, Pages 1 - 6

https://doi.org/10.1145/3061639.3062281

Published: 18 June 2017 Publication History

Abstract

Modern DRAM suffers from a new problem called row hammering. The problem is expected to become more severe in future DRAMs mostly due to increased inter-row coupling at advanced technology. In order to address this problem, we present a probabilistically managed table (called PRoHIT) implemented on the DRAM chip. The table keeps track of victim row candidates in a probabilistic way and, in case of auto-refresh, the topmost entry is additionally refreshed thereby mitigating the row hammering problem. Our experiments with PARSEC benchmark and synthetic traces show that PRoHIT outperforms the state-of-the-art method, PARA, by 35.7% (PARSEC) in terms of the reduction ratio of row-hammer cases. Our proposed method also shows constantly superior performance to PARA for synthetic traces.

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Cited By

Kim DPark HYeo ILee YKim YLee HKwon K(2024)Rowhammer Attacks in Dynamic Random-Access Memory and Defense MethodsSensors10.3390/s2402059224:2(592)Online publication date: 17-Jan-2024
https://doi.org/10.3390/s24020592
Kim YKwon M(2024)Mitigation of 1-Row Hammer in BCAT Structures Through Buried Oxide Integration and Investigation of Inter-Cell DisturbancesElectronics10.3390/electronics1324493613:24(4936)Online publication date: 13-Dec-2024
https://doi.org/10.3390/electronics13244936
Kim YLim CKwon M(2024)Mitigating WL-to-WL Disturbance in Dynamic Random-Access Memory (DRAM) through Adopted Spherical Shallow Trench Isolation with Silicon Nitride Layer in the Buried Channel Array Transistor (BCAT)Electronics10.3390/electronics1304068113:4(681)Online publication date: 7-Feb-2024
https://doi.org/10.3390/electronics13040681
Show More Cited By

Index Terms

Making DRAM Stronger Against Row Hammering
1. Hardware
  1. Integrated circuits
    1. Semiconductor memory
      1. Dynamic memory
2. Security and privacy
  1. Security in hardware
    1. Hardware attacks and countermeasures

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cover image ACM Conferences

DAC '17: Proceedings of the 54th Annual Design Automation Conference 2017

June 2017

533 pages

ISBN:9781450349277

DOI:10.1145/3061639

Copyright © 2017 ACM.

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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SIGBED: ACM Special Interest Group on Embedded Systems

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Association for Computing Machinery

New York, NY, United States

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Published: 18 June 2017

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DAC '17: The 54th Annual Design Automation Conference 2017

June 18 - 22, 2017

TX, Austin, USA

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Overall Acceptance Rate 1,770 of 5,499 submissions, 32%

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Cited By

Kim DPark HYeo ILee YKim YLee HKwon K(2024)Rowhammer Attacks in Dynamic Random-Access Memory and Defense MethodsSensors10.3390/s2402059224:2(592)Online publication date: 17-Jan-2024
https://doi.org/10.3390/s24020592
Kim YKwon M(2024)Mitigation of 1-Row Hammer in BCAT Structures Through Buried Oxide Integration and Investigation of Inter-Cell DisturbancesElectronics10.3390/electronics1324493613:24(4936)Online publication date: 13-Dec-2024
https://doi.org/10.3390/electronics13244936
Kim YLim CKwon M(2024)Mitigating WL-to-WL Disturbance in Dynamic Random-Access Memory (DRAM) through Adopted Spherical Shallow Trench Isolation with Silicon Nitride Layer in the Buried Channel Array Transistor (BCAT)Electronics10.3390/electronics1304068113:4(681)Online publication date: 7-Feb-2024
https://doi.org/10.3390/electronics13040681
Cho YKim YKwon M(2024)Mitigating Pass Gate Effect in Buried Channel Array Transistors Through Buried Oxide Integration: Addressing Interference Phenomenon Between Word LinesApplied Sciences10.3390/app14221034814:22(10348)Online publication date: 11-Nov-2024
https://doi.org/10.3390/app142210348
Verma SSingh V(2024)SMS: Solving Many-sided RowHammerProceedings of the International Symposium on Memory Systems10.1145/3695794.3695802(78-88)Online publication date: 30-Sep-2024
https://dl.acm.org/doi/10.1145/3695794.3695802
M PMutyam MTavva V(2024)Cache Line Pinning for Mitigating Row Hammer AttackProceedings of the 53rd International Conference on Parallel Processing10.1145/3673038.3673114(802-811)Online publication date: 12-Aug-2024
https://dl.acm.org/doi/10.1145/3673038.3673114
Saxena AMathur SQureshi MTsafrir DMusuvathi MGupta RAbu-Ghazaleh N(2024)Rubix: Reducing the Overhead of Secure Rowhammer Mitigations via Randomized Line-to-Row MappingProceedings of the 29th ACM International Conference on Architectural Support for Programming Languages and Operating Systems, Volume 210.1145/3620665.3640404(1014-1028)Online publication date: 27-Apr-2024
https://dl.acm.org/doi/10.1145/3620665.3640404
Saxena AJaleel AQureshi M(2024)ImPress: Securing DRAM Against Data-Disturbance Errors via Implicit Row-Press Mitigation2024 57th IEEE/ACM International Symposium on Microarchitecture (MICRO)10.1109/MICRO61859.2024.00073(935-948)Online publication date: 2-Nov-2024
https://doi.org/10.1109/MICRO61859.2024.00073
Canpolat OYağlıkçı AOlgun AYuksel ITuğrul YKanellopoulos KErgin OMutlu O(2024)BreakHammer: Enhancing RowHammer Mitigations by Carefully Throttling Suspect Threads2024 57th IEEE/ACM International Symposium on Microarchitecture (MICRO)10.1109/MICRO61859.2024.00072(915-934)Online publication date: 2-Nov-2024
https://doi.org/10.1109/MICRO61859.2024.00072
France LBruguier FNovo DMushtaq MBenoit P(2024)Reducing the Silicon Area Overhead of Counter-Based Rowhammer MitigationsIEEE Computer Architecture Letters10.1109/LCA.2023.332882423:1(61-64)Online publication date: Jan-2024
https://doi.org/10.1109/LCA.2023.3328824
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