research-article

CMOS Transconductor Analysis for Low Temperature Sensitivity Based on ZTC MOSFET Condition

Authors:

Hamilton Klimach,

Eric FabrisAuthors Info & Claims

SBCCI '15: Proceedings of the 28th Symposium on Integrated Circuits and Systems Design

Article No.: 32, Pages 1 - 7

https://doi.org/10.1145/2800986.2801000

Published: 31 August 2015 Publication History

Abstract

The necessary conditions to design MOSFET transconductors with low temperature dependence are analysed and defined in this paper. Transconductors, or Gm circuits, are fundamental blocks used to implement adjustable filters, multipliers, controlled oscillators, amplifiers and a large variety of analog circuits. Temperature stability is a must in such applications, and herein we show a strategy that can be used to improve the temperature stability of these transconductors by biasing MOSFETs at transconductance zero-temperature condition (GZTC). This special bias condition is analysed using a MOSFET model which is continuous from weak to strong inversion, and it is proved that this condition always occurs from moderate to strong inversion operation in any CMOS fabrication process. Additionally, a few example circuits are proposed using this technique: a single-ended resistor emulator, an impedance inverter, a first order and a second order filter. These circuits were simulated in a 130 nm CMOS commercial process, resulting improved thermal stability in the main performance parameters, in the range from 27 to 53 ppm/°C.

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Cited By

Pinto RToledo POliveira J(2023)Assessment of the Zero Distortion Bias Point Using Design-Oriented 7-Parameter MOSFET Model2023 7th International Young Engineers Forum (YEF-ECE)10.1109/YEF-ECE58420.2023.10209294(84-88)Online publication date: 7-Jul-2023
https://doi.org/10.1109/YEF-ECE58420.2023.10209294
de Lima MBarúqui FSoares C(2023)Voltage Regulator with Ellipsoidal Transistors2023 36th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI)10.1109/SBCCI60457.2023.10261974(1-4)Online publication date: 28-Aug-2023
https://doi.org/10.1109/SBCCI60457.2023.10261974
Zhang YMirchandani NAbdelfattah SOnabajo MShrivastava A(2022)An Ultra-Low Power RSSI Amplifier for EEG Feature Extraction to Detect SeizuresIEEE Transactions on Circuits and Systems II: Express Briefs10.1109/TCSII.2021.309905669:2(329-333)Online publication date: Feb-2022
https://doi.org/10.1109/TCSII.2021.3099056
Show More Cited By

Index Terms

CMOS Transconductor Analysis for Low Temperature Sensitivity Based on ZTC MOSFET Condition
1. Hardware
  1. Integrated circuits

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Published In

cover image ACM Conferences

SBCCI '15: Proceedings of the 28th Symposium on Integrated Circuits and Systems Design

August 2015

279 pages

ISBN:9781450337632

DOI:10.1145/2800986

General Chair:
Robson Nunes de Lima
UFBA, Brazil
,
Program Chairs:
Ana Isabela Araújo Cunha
UFBA, Brazil
,
Calvin Plett
Carleton University, Canada
,
Publications Chair:
Wagner Luiz Alves de Oliveira
UFBA, Brazil

Copyright © 2015 ACM.

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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SBC: Brazilian Computer Society
SIGDA: ACM Special Interest Group on Design Automation
SBMICRO: Brazilian Microelectronics Society

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Association for Computing Machinery

New York, NY, United States

Publication History

Published: 31 August 2015

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Refereed limited

Funding Sources

Universidade Federal do Rio Grande do Sul

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SBCCI '15

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SBC
SIGDA
SBMICRO

SBCCI '15: 28th Symposium on Integrated Circuits and Systems Design

August 31 - September 4, 2015

Salvador, Brazil

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SBCCI '15 Paper Acceptance Rate 43 of 98 submissions, 44%;

Overall Acceptance Rate 133 of 347 submissions, 38%

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Cited By

Pinto RToledo POliveira J(2023)Assessment of the Zero Distortion Bias Point Using Design-Oriented 7-Parameter MOSFET Model2023 7th International Young Engineers Forum (YEF-ECE)10.1109/YEF-ECE58420.2023.10209294(84-88)Online publication date: 7-Jul-2023
https://doi.org/10.1109/YEF-ECE58420.2023.10209294
de Lima MBarúqui FSoares C(2023)Voltage Regulator with Ellipsoidal Transistors2023 36th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI)10.1109/SBCCI60457.2023.10261974(1-4)Online publication date: 28-Aug-2023
https://doi.org/10.1109/SBCCI60457.2023.10261974
Zhang YMirchandani NAbdelfattah SOnabajo MShrivastava A(2022)An Ultra-Low Power RSSI Amplifier for EEG Feature Extraction to Detect SeizuresIEEE Transactions on Circuits and Systems II: Express Briefs10.1109/TCSII.2021.309905669:2(329-333)Online publication date: Feb-2022
https://doi.org/10.1109/TCSII.2021.3099056
Toledo PRubino GMusolino FCrovetti P(2021)Re-thinking Analog Integrated Circuits in Digital Terms: A New Design Concept for the IoT EraIEEE Transactions on Circuits and Systems II: Express Briefs10.1109/TCSII.2021.3049680(1-1)Online publication date: 2021
https://doi.org/10.1109/TCSII.2021.3049680
Gupta NJain AKumar A(2021)20 nm GAA-GaN/Al2O3 nanowire MOSFET for improved analog/linearity performance metrics and suppressed distortionApplied Physics A10.1007/s00339-021-04673-9127:7Online publication date: 16-Jun-2021
https://doi.org/10.1007/s00339-021-04673-9
Cordova DToledo PKlimach HBampi SFabris E(2019)EMI resisting MOSFET-only voltage reference based on ZTC conditionAnalog Integrated Circuits and Signal Processing10.1007/s10470-016-0766-589:1(45-59)Online publication date: 1-Jan-2019
https://dl.acm.org/doi/10.1007/s10470-016-0766-5

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