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Design benchmarking to 7nm with FinFET predictive technology models

Published: 30 July 2012 Publication History

Abstract

The coming ten years promise great changes in silicon technology, with the end of planar bulk CMOS and the rise of interconnect parasitics to true significance. With such shifts in the underlying technology, the simple extrapolation of performance metrics may lead to pronounced prediction errors in design pathfinding. In this work, we utilize newly developed Predictive Technology Models for FinFETs aligned to the 2011 ITRS. Together with predictive interconnect models, we project performance and power landscape for the technology nodes from 20nm to 7nm. We present an overview of models, assess the advantage of FinFET over bulk CMOS devices, benchmark the scaling of critical design metrics, and illustrate major design barriers toward the 7nm node.

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    cover image ACM Conferences
    ISLPED '12: Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design
    July 2012
    438 pages
    ISBN:9781450312493
    DOI:10.1145/2333660
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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    Publication History

    Published: 30 July 2012

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    Author Tags

    1. beol
    2. finfet
    3. integrated circuits
    4. performance
    5. power
    6. predictive technology models
    7. scaling trends

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    ISLPED'12
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    ISLPED'12: International Symposium on Low Power Electronics and Design
    July 30 - August 1, 2012
    California, Redondo Beach, USA

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    • (2022)Vertical MoS2 transistors with sub-1-nm gate lengthsNature10.1038/s41586-021-04323-3603:7900(259-264)Online publication date: 9-Mar-2022
    • (2021)Neural Network Calculations at the Speed of Light Using Optical Vector-Matrix Multiplication and Optoelectronic ActivationIEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences10.1587/transfun.2020KEP0016E104.A:11(1477-1487)Online publication date: 1-Nov-2021
    • (2021)Challenges in Low Power VLSI Design: A Review2021 5th International Conference on Electronics, Communication and Aerospace Technology (ICECA)10.1109/ICECA52323.2021.9676055(191-195)Online publication date: 2-Dec-2021
    • (2021)Modeling Soft-Error Reliability Under Variability2021 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)10.1109/DFT52944.2021.9568295(1-6)Online publication date: 6-Oct-2021
    • (2020)Performance Investigation of FinFET-Based MO-CCII and its Applications: Resistor-Less Multi-Function Bi-Quadratic Filter and Balanced ModulatorJournal of Circuits, Systems and Computers10.1142/S021812662050175329:11(2050175)Online publication date: 21-Jan-2020
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    • (2019)Differential Power Analysis Immune Design of FinFET Based Novel Differential Logic Gate2019 IEEE International Symposium on Circuits and Systems (ISCAS)10.1109/ISCAS.2019.8702598(1-5)Online publication date: May-2019
    • (2019)NVLCFF: An Energy-Efficient Magnetic Nonvolatile Level Converter Flip-Flop for Ultra-Low-Power DesignCircuits, Systems, and Signal Processing10.1007/s00034-019-01309-5Online publication date: 15-Nov-2019
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