Article

Analytical modeling of SRAM dynamic stability

Authors:

Ari Arapostathis,

Michael OrshanskyAuthors Info & Claims

ICCAD '06: Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design

Pages 315 - 322

https://doi.org/10.1145/1233501.1233564

Published: 05 November 2006 Publication History

Abstract

In this paper, for the first time, a theory for evaluating dynamic noise margins of SRAM cells is developed analytically. The results allow predicting the transient error susceptibility of an SRAM cell using a closed-form expression. The key innovation involves using the methods of nonlinear system theory in developing the model. It is shown that when a transient noise of given magnitude affects a sensitive node of a cell, the bi-stable, feedback-driven nature of the cell determines whether the noise will be suppressed or will evolve to eventually flip state. The specific formal and quantitative result is a closed-form expression that can be used to predict whether a cell flip will occur for a noise signal with specific characteristics, and for a given SRAM cell design. Experiments show excellent match between the analytical prediction and the SPICE simulation results.

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Cited By

T. Venkata LKamaraju M(2024)A novel single ended 3T SRAM cell using FinFET technology for low power applicationsi-manager’s Journal on Electronics Engineering10.26634/jele.14.4.2091114:4(25)Online publication date: 2024
https://doi.org/10.26634/jele.14.4.20911
Venkata LKamaraju M(2024)A novel 1T-1D single ended SRAM cell using FinFET technology for low power applicationsi-manager’s Journal on Electronics Engineering10.26634/jele.14.3.2028614:3(6)Online publication date: 2024
https://doi.org/10.26634/jele.14.3.20286
Selvarasu SSaravanan S(2019)RETRACTED ARTICLE: Hybrid on-chip soft computing model for performance evaluation of 6T SRAM cell using 45-nm technologySoft Computing10.1007/s00500-019-04581-424:14(10785-10799)Online publication date: 9-Dec-2019
https://doi.org/10.1007/s00500-019-04581-4
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Index Terms

Analytical modeling of SRAM dynamic stability
1. Computing methodologies
  1. Modeling and simulation
    1. Model development and analysis
      1. Model verification and validation
2. Hardware
  1. Hardware validation
  2. Integrated circuits
    1. Semiconductor memory
      1. Static memory

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cover image ACM Conferences

ICCAD '06: Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design

November 2006

147 pages

ISBN:1595933891

DOI:10.1145/1233501

General Chair:
Soha Hassoun
Tufts Univ., Medford, MA

Copyright © 2006 ACM.

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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IEEE-CAS: Circuits & Systems
IEEE-CS: Computer Society

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Association for Computing Machinery

New York, NY, United States

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Published: 05 November 2006

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ICCAD06: The International Conference on Computer-Aided Design 2006

November 5 - 9, 2006

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Overall Acceptance Rate 457 of 1,762 submissions, 26%

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Cited By

T. Venkata LKamaraju M(2024)A novel single ended 3T SRAM cell using FinFET technology for low power applicationsi-manager’s Journal on Electronics Engineering10.26634/jele.14.4.2091114:4(25)Online publication date: 2024
https://doi.org/10.26634/jele.14.4.20911
Venkata LKamaraju M(2024)A novel 1T-1D single ended SRAM cell using FinFET technology for low power applicationsi-manager’s Journal on Electronics Engineering10.26634/jele.14.3.2028614:3(6)Online publication date: 2024
https://doi.org/10.26634/jele.14.3.20286
Selvarasu SSaravanan S(2019)RETRACTED ARTICLE: Hybrid on-chip soft computing model for performance evaluation of 6T SRAM cell using 45-nm technologySoft Computing10.1007/s00500-019-04581-424:14(10785-10799)Online publication date: 9-Dec-2019
https://doi.org/10.1007/s00500-019-04581-4
Vatajelu EDi Natale GPnnetto PFanucci LTeich J(2016)Towards a highly reliable SRAM-based PUFsProceedings of the 2016 Conference on Design, Automation & Test in Europe10.5555/2971808.2971870(273-276)Online publication date: 14-Mar-2016
https://dl.acm.org/doi/10.5555/2971808.2971870
Ho YHuang GLi P(2014)Understanding SRAM Stability via Bifurcation AnalysisACM Transactions on Design Automation of Electronic Systems10.1145/264795719:4(1-25)Online publication date: 29-Aug-2014
https://dl.acm.org/doi/10.1145/2647957
Boley JChandra VAitken RCalhoun BMacii E(2013)Leveraging sensitivity analysis for fast, accurate estimation of SRAM dynamic write VMINProceedings of the Conference on Design, Automation and Test in Europe10.5555/2485288.2485717(1819-1824)Online publication date: 18-Mar-2013
https://dl.acm.org/doi/10.5555/2485288.2485717
Teman AMordakhay AFish A(2013)Functionality and stability analysis of a 400mV quasi-static RAM (QSRAM) bitcellMicroelectronics Journal10.1016/j.mejo.2012.12.00544:3(236-247)Online publication date: Mar-2013
https://doi.org/10.1016/j.mejo.2012.12.005
Abu-Rahma MAnis MAbu-Rahma MAnis M(2012)Variation-Tolerant SRAM Write and Read Assist TechniquesNanometer Variation-Tolerant SRAM10.1007/978-1-4614-1749-1_3(49-95)Online publication date: 26-Sep-2012
https://doi.org/10.1007/978-1-4614-1749-1_3
Chandra VAitken R(2011)On the impact of gate oxide degradation on SRAM dynamic and static write-abilityProceedings of the 16th Asia and South Pacific Design Automation Conference10.5555/1950815.1950951(707-712)Online publication date: 25-Jan-2011
https://dl.acm.org/doi/10.5555/1950815.1950951
Kim SGuthaus MStok LDutt NHassoun S(2011)Leakage-aware redundancy for reliable sub-threshold memoriesProceedings of the 48th Design Automation Conference10.1145/2024724.2024826(435-440)Online publication date: 5-Jun-2011
https://dl.acm.org/doi/10.1145/2024724.2024826
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