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A novel hypergraph convolution network-based approach for predicting the material removal rate in chemical mechanical planarization

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Abstract

The material removal rate (MRR) plays a critical role in the chemical mechanical planarization (CMP) process in the semiconductor industry. Many physics-based and data-driven approaches have been proposed to-date to predict the MRR. Nevertheless, most of them neglect the underlying equipment structure containing essential interaction mechanisms among different components. To fill the gap, this paper proposes a novel hypergraph convolution network (HGCN) based approach for predicting MRR in the CMP process. The main contributions include: (1) a generic hypergraph model to represent the interrelationships of complex equipment; and (2) a temporal-based prediction approach to learn the complex data correlation and high-order representation based on the hypergraph. To validate the effectiveness of the proposed approach, a case study is conducted by comparing with other cutting-edge models, of which it outperforms in several metrics. It is envisioned that this research can also bring insightful knowledge to similar scenarios in the manufacturing process.

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Data can be found via: https://www.phmsociety.org/events/conference/phm/16/data-challenge.

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Funding

This research work was partially supported by the grants from the National Natural Research Foundation of China (No. 52005424), and Research Committee of The Hong Kong Polytechnic University (G-UAHH).

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Correspondence to Pai Zheng.

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We wish to confirm that there are no known conflicts of interest associated with this publication and there has been no significant financial support for this work that could have influenced its outcome. We confirm that the manuscript has been read and approved by all named authors and that there are no other persons who satisfied the criteria for authorship but are not listed.

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Xia, L., Zheng, P., Huang, X. et al. A novel hypergraph convolution network-based approach for predicting the material removal rate in chemical mechanical planarization. J Intell Manuf 33, 2295–2306 (2022). https://doi.org/10.1007/s10845-021-01784-1

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  • DOI: https://doi.org/10.1007/s10845-021-01784-1

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