InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Mi-Ra KIM, Jin-Koo RHEE, Chang-Woo LEE, Yeon-Sik CHAE, Jae-Hyun CHOI, Wan-Joo KIM

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Keywords: InP, Gunn diodes, shallow-barrier schottky contacts, current-limiting cathode

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2010 Volume E93.C Issue 5 Pages 585-589

DOI https://doi.org/10.1587/transele.E93.C.585

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Abstract

We fabricated and examined current limiting effect for InP Gunn diodes with stable depletion layer mode operation of diodes for high efficiency Gunn oscillators. Current limiting at the cathode was achieved by a shallow Schottky barrier at the interface. We discussed fabrication procedure, the results for negative differential resistance and rf tests for InP Gunn diodes. It was shown that the fabricated Gunn diodes have the output power of 10.22dBm at a frequency of 90.13GHz. Its input voltage and corresponding current were 8.55V and 252mA, respectively.

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