Phonon-Drag Effect on Seebeck Coefficient in Co-Doped Si Wire with Submicrometer-Scaled Cross Section

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Graduate School of Science and Technology, Shizuoka University">Yuhei SUZUKI, Faiz SALLEH, Yoshinari KAMAKURA, Masaru SHIMOMURA, Graduate School of Science and Technology, Shizuoka University">Hiroya IKEDA

Author information

Keywords: Si, Seebeck coefficient, co-doping, phonon drag

JOURNAL RESTRICTED ACCESS

2017 Volume E100.C Issue 5 Pages 486-489

DOI https://doi.org/10.1587/transele.E100.C.486

Details

Abstract

The Seebeck coefficient of Si wire co-doped with P and Ga atoms is investigated for applying thermoelectric devices. The observed Seebeck coefficient is closed to the theoretical values of electronic part of Seebeck coefficient due to the electronic transport. From the estimation of phonon scattering processes, it is found that the phonon-drag contribution to the Seebeck coefficient in co-doped Si wire is mainly governed by the phonon-boundary scattering.

Corresponding author

Register with J-STAGE for free!