Design of a 5MHz half-bridge gate driver for GaN HEMTs with adaptive output current

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Liang Li, School ofMicroelectronics, Fudan University">Dejin Zhou, Wei Huang, Ningye He, Yuan Xu, Rengxia Ning, Huangshan University, Engineering Technology Research Center of Intelligent Microsystems">Zhenhai Chen

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Keywords: GaN HEMT, half-bridge driver, adaptive output current, high efficiency

JOURNAL FREE ACCESS

2023 Volume 20 Issue 19 Pages 20230342

DOI https://doi.org/10.1587/elex.20.20230342

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Abstract

In this paper, a half-bridge gate driver with adaptive output current for GaN HEMTs is introduced. The output drive current of the driver is adapted to the load of GaN HEMTs, by adjusting the W/L size of drive transistors. The rise time of driver is achieved to be basically constant by the adaptive output current adjustment for different load, so noise can be effectively immunized and working efficiency is improved. Based on the proposed adaptive output current drive circuit, a half-bridge gate driver is designed and implemented in the 180nm BCD process. Tested results show the driver has a constant rise time of about 5ns under 5MHz with C_L of 0.5nF, 2.0nF, and 3.5nF respectively.

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