Design and fabrication of ultra-wideband power amplifier based on GaN HEMT

LETTER

Zhiqun Cheng, Dandan Zhu, Guoguo Yan, Shuai Chen, Kai Wang, Kaikai Fan, Guohua Liu, Hui Wang, Steven Gao

Author information

Zhiqun Cheng
Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University
Dandan Zhu
Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University
Guoguo Yan
Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University
Shuai Chen
Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University
Kai Wang
Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University
Kaikai Fan
Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University
Guohua Liu
Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University
Hui Wang
Key Lab. of RF Circuit and System, Education Ministry, Hangzhou Dianzi University
Steven Gao
School of Engineering and Digital Arts, University of Kent

Keywords: GaN HEMT, ultra broadband, power amplifier, output power

JOURNAL FREE ACCESS

2015 Volume 12 Issue 20 Pages 20150703

DOI https://doi.org/10.1587/elex.12.20150703

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Abstract

The research of an ultra-broadband power amplifier based on TGF2023-2-02 GaN HEMT which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper. The transistor of GaN HEMT is modeled and a frequency compensation and multi-side impedance matching approach are adopted for broadband impedance matching of amplifier. And a fan shaped micro strip line is implemented in the input matching network to achieve the wideband higher gain features. The measured results show that the amplifier module provided more than 37 dBm output power with minimum small signal gain of 9.8 dB over 3–8 GHz. The saturated output power is 38.3 dBm under DC bias of Vds = 28 V, Vgs = −2.75 V at the frequency of 5 GHz.

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