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DRC 2021: Santa Barbara, CA, USA
- Device Research Conference, DRC 2021, Santa Barbara, CA, USA, June 20-23, 2021. IEEE 2021, ISBN 978-1-6654-1240-7
- Xi Zhou
, Liang Zhao, Linfeng Lu, Dongdong Li
CuAg/Al2O3/CuAg Threshold Switching Selector for RRAM Applications. 1-2 - Elisabetta Corti, Corentin Delacour, Aida Todri-Sanial
Frequency Injection Locking-Controlled Oscillations for Synchronized Operations in VO2 Crossbar Devices. 1-2 - Ankit Shukla
Terahertz auto oscillations in non-collinear coplanar metallic antiferromagnets. 1-2 - Mamidala Saketh Ram, Karl-Magnus Persson, Lars-Erik Wernersson:
Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration. 1-2 - Kaikai Liu
720 Million Quality Factor Integrated All-Waveguide Photonic Resonator. 1-2 - Joshua A. Perozek
Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz. 1-2 - Myungsoo Kim, Emiliano Pallecchi, Henri Happy, Deji Akinwande:
Single-Pole-Double-Throw RF switches based on monolayer MoS2. 1-2 - Karam Cho, Xuanyao Fong, Sumeet Kumar Gupta:
Exchange-Coupling-Enabled Electrical-Isolation of Compute and Programming Paths in Valley-Spin Hall Effect based Spintronic Device for Neuromorphic Applications. 1-2 - Haibo Gong, Rubab Ume, Vadim Tokranov, Michael Yakimov, Devendra Sadana, Kevin Brew, Guy Cohen, Sandra Schujman, Karsten Beckmann
Bilayer Ga-Sb Phase Change Memory with Intermediate Resistance State. 1-2 - Chih-Yao Chang, Kuan-Ju Wu, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang:
Fabrication of Light-Emitting AlGaN/GaN High Electron Mobility Transistors with a Single Quantum Well Inserted. 1-2 - Daniel S. Schneider, Eros Reato, Leonardo Lucchesi, Zhenyu Wang, Agata Piacetini, Jens Bolten, Damiano Marian, Enrique G. Marin, Aleksandra Radenovic, Zhenxing Wang, Gianluca Fiori, Andras Kis, Giuseppe Iannaccone, Daniel Neumaier, Max Christian Lemme:
MoS2/graphene Lateral Heterostructure Field Effect Transistors. 1-2 - Xinkang Chen, Chun-Li Lo, Mark C. Johnson, Zhihong Chen
Modeling and Circuit Analysis of Interconnects with TaS2 Barrier/Liner. 1-2 - Oliver Hilt
GaN-channel HEMTs with AlN buffer for high-voltage switching. 1-2 - Ying-Chen Daphne Chen, Sumant Sarkar, John Gibbs:
Self-Rectified Memristor with Bimodal Functionality and Forming Polarity Responses in Crossbar Array Applications. 1-2 - A. E. Islam, Kevin D. Leedy, Neil A. Moser, S. Ganguli, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak:
Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealing. 1-2 - Nicky Lu:
Optimizing Monolithic and Heterogeneous Integration to Create Intelligent-Grand-Scale-Integration for Smart MicroSystems. 1-2 - Shun'ichiro Ohmi, Hiroki Morita, Masaki Hayashi, Akio Ihara, Jooyoung Pyo:
Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications. 1-2 - Srabanti Chowdhury
Integration of Polycrystalline diamond on top of GaN and Ga2O3 devices for thermal management. 1 - Dolar Khachariya
Al0.85Ga0.15N/Al0.6Ga0.4N High Electron Mobility Transistors on Native AlN Substrates with >9 MV/cm Mesa Breakdown Fields. 1-2 - Koichi Tamura, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome
Fast terahertz detection by asymmetric dual-grating-gate graphene FET. 1-2 - Jun Tao
Artificial Optic-neural Synapse Based on Floating-gate Phototransistor for Machine Vision. 1-2 - Austin Hickman, Reet Chaudhuri, Neil Moser, Michael Elliott, Kazuki Nomoto, Lei Li, James C. M. Hwang
Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz. 1-2 - Louis Hutin, Benoit Bertrand, Heimanu Niebojewski, Pierre-André Mortemousque, Mikaël Cassé, Gérard Billiot, Xavier Jehl
MOS technology for quantum computing: recent progress and perspectives for scaling up. 1-2 - Nadim Chowdhury, Jaeyoung Jung, Qingyun Xie, Mengyang Yuan, Kai Cheng, Tomás Palacios:
Performance Estimation of GaN CMOS Technology. 1-2 - Boce Lin
Experimental RF Characterization of Ferroelectric Hafnium Zirconium Oxide Material at GHz for Microwave Applications. 1-2 - Dennis Lin, Xiangyu Wu, Vivek Mootheri, Daire Cott, Benjamin Groven, Pierre Morin, Inge Asselberghs
On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation. 1-2 - Brian Markman, Simone Tommaso Suran Brunelli, Matthew Guidry, Logan Whitaker, Mark J. W. Rodwell:
Lg = 40nm Composite Channel MOS-HEMT Exhibiting fτ = 420 GHz, fmax = 562 GHz. 1-2 - Xinyi Xia, Minghan Xian, Patrick Carey, Chaker Fares, Fan Ren
Operation Up to 600K of Vertical β-Ga2O3 Schottky Rectifier With 754V Reverse Breakdown Voltage. 1-2 - Jie Zhang, Lincheng Wei, Meng Jia, Peng Cui, Yuping Zeng:
Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor. 1-2 - Wenbin Zhang, Jianshi Tang, Bin Gao, Wen Sun, Wei Liu, Kanwen Wang, Wei Wu, He Qian, Huaqiang Wu:
Impact of Bottom Electrode Roughness on the Analog Switching Characteristics in Nanoscale RRAM Array. 1-2 - Mohamad G. Moinuddin, Srikant Srinivasan, Satinder K. Sharma:
Reduced Switching Current Density and Improved Interface Quality using Oxynitride Tunnel Barrier in Magnetic Tunnel Junctions for MRAM Application. 1-2 - Kelly Liang, Xiao Wang, Yuchen Zhou, Xin Xu, Calla McCulley, Liang Wang, Jaydeep Kulkarni, Ananth Dodabalapur:
Field-Emission Enhanced Contacts for Disordered Semiconductor based Thin-Film Transistors. 1-2 - Neel Chatterjee, Yuhang Sun
Mobility Boost in Transparent Oxide Semiconductors with High-κ Gated TFTs. 1-2 - Agata Piacentini, Daniel Schneider, Martin Otto, Bárbara Canto, Zhenyu Wang, Aleksandra Radenovic, Andras Kis, Max Christian Lemme, Daniel Neumaier:
Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation. 1-2 - Shayan Parhizkar
Waveguide-Integrated Photodetectors based on 2D Platinum Diselenide. 1-2 - Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi:
MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator. 1-2 - Atsushi Shimbori
Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer. 1-2 - Ashwin Tunga, Xiuling Li, Shaloo Rakheja:
Modeling-based design and benchmarking of Al-rich AlGaN 3D nanosheet MOSFET and MOSHEMTs for RF Applications. 1-2
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