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Joachim Würfl

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2020 – today

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2022
[j16]
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  - journals/access/TsaoHWH22
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Yi-Fan Tsao, Heng-Shou Hsu, Joachim Würfl, Heng-Tung Hsu:
Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications. IEEE Access 10: 77826-77836 (2022)
2021
[c4]
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  - conf/drc/HiltBTWW21
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Oliver Hilt, Frank Brunner, Eldad Bahat-Treidel, Mihaela Wolf, Joachim Würfl:
GaN-channel HEMTs with AlN buffer for high-voltage switching. DRC 2021: 1-2
2020
[c3]
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  - conf/drc/TreidelHCKGLW20
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Eldad Bahat-Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl:
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. DRC 2020: 1-2

2010 – 2019

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2018
[c2]
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  - conf/ieeesensors/ChaturvediLSKMC18
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Nidhi Chaturvedi, Richard Lossy, Kuldip Singh, Dheeraj K. Kharbanda, Shivanshu Mishra, Ashok Chauhan, Kaushal Kishore, Pramod K. Khanna, Joachim Würfl:
Design and Development of Gallium Nitride HEMTs Based Liquid Sensor. IEEE SENSORS 2018: 1-3
2016
[j15]
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  - journals/mr/MeneghiniHFSCSP16
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Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale:
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58: 177-184 (2016)
[j14]
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  - journals/mr/Bahat-TreidelHT16
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Eldad Bahat-Treidel, Oliver Hilt, O. Bahat Treidel, Joachim Würfl:
Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs. Microelectron. Reliab. 64: 556-559 (2016)
2015
[j13]
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  - journals/mr/FleuryCRHWDSKSP15
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Clément Fleury, Mattia Capriotti, Matteo Rigato, Oliver Hilt, Joachim Würfl, Joff Derluyn, Stephan Steinhauer, Anton Köck, Gottfried Strasser, Dionyz Pogany:
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 55(9-10): 1687-1691 (2015)
[c1]
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  - conf/essderc/CapriottiFBRLPS15
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Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl:
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. ESSDERC 2015: 60-63
2014
[j12]
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  - journals/mr/IvoCKSLZMWTGB14
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Ponky Ivo, Eunjung Melanie Cho, Przemyslaw Kotara, Lars Schellhase, Richard Lossy, Ute Zeimer, Anna Mogilatenko, Joachim Würfl, Günther Tränkle, Arkadiusz Glowacki, Christian Boit:
New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery. Microelectron. Reliab. 54(6-7): 1288-1292 (2014)
[j11]
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  - journals/mr/ChevtchenkoSBJF14
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Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl:
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. Microelectron. Reliab. 54(9-10): 2191-2195 (2014)
2013
[j10]
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  - journals/mr/FleuryZBCHVMZWDSP13
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Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany:
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 53(9-11): 1444-1449 (2013)
2012
[j9]
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  - journals/mr/LossyBW12
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Richard Lossy, Hervé Blanck, Joachim Würfl:
Reliability studies on GaN HEMTs with sputtered Iridium gate module. Microelectron. Reliab. 52(9-10): 2144-2148 (2012)
[j8]
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  - journals/mr/ZanandreaBRSMZHIWM12
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Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso:
Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron. Reliab. 52(9-10): 2426-2430 (2012)
2011
[j7]
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  - journals/mr/IvoGBLWBT11
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Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle:
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. Microelectron. Reliab. 51(2): 217-223 (2011)
[j6]
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  - journals/mr/WuerflBBCHIKKLSSWZ11
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Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska:
Reliability issues of GaN based high voltage power devices. Microelectron. Reliab. 51(9-11): 1710-1716 (2011)
2010
[j5]
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  - journals/mr/PazirandehWT10
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Reza Pazirandeh, Joachim Würfl, Günther Tränkle:
Determination of GaN HEMT reliability by monitoring I_DSS. Microelectron. Reliab. 50(6): 763-766 (2010)

2000 – 2009

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2009
[j4]
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  - journals/mr/GlowackiLBIBPLWT09
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Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle:
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. Microelectron. Reliab. 49(9-11): 1211-1215 (2009)
2004
[j3]
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  - journals/mr/SozzaDMGHDCLW04
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A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl:
Reliability Investigation of Gallium Nitride HEMT. Microelectron. Reliab. 44(9-11): 1369-1373 (2004)
2003
[j2]
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  - journals/mr/BrunnerBKSWW03
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Frank Brunner, A. Braun, Paul Kurpas, J. Schneider, Joachim Würfl, Markus Weyers:
Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE. Microelectron. Reliab. 43(6): 839-844 (2003)
2001
[j1]
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  - journals/mr/WurflKBMRW01
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Joachim Würfl, Paul Kurpas, Frank Brunner, Michael Mai, Matthias Rudolph, Markus Weyers:
Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing. Microelectron. Reliab. 41(8): 1103-1108 (2001)

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