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Tae-Sung Lee
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2020 – today
- 2021
- [j2]Dae-Hoon Na, Jang-Woo Lee, Seon-Kyoo Lee, Hwasuk Cho, Junha Lee, Manjae Yang, Eunjin Song, Anil Kavala, Tongsung Kim, Dong-Su Jang, Youngmin Jo, Ji-Yeon Shin, Byung-Kwan Chun, Tae-Sung Lee, Byunghoon Jeong, Chiweon Yoon, Dongku Kang, Seungjae Lee, Jungdon Ihm, Dae-Seok Byeon, Jinyub Lee, Jai Hyuk Song:
A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage. IEEE J. Solid State Circuits 56(4): 1129-1140 (2021) - 2020
- [c2]Jang-Woo Lee, Dae-Hoon Na, Anil Kavala, Hwasuk Cho, Junha Lee, Manjae Yang, Eunjin Song, Tongsung Kim, Seon-Kyoo Lee, Dong-Su Jang, Byung-Kwan Chun, Youngmin Jo, Sunwon Jung, Doo-Il Jung, Chan-ho Kim, Daewoon Kang, Tae-Sung Lee, Byunghoon Jeong, Chiweon Yoon, Dongku Kang, Seungjae Lee, Jungdon Ihm, Dae-Seok Byeon, Jin-Yup Lee, Sangjoon Hwang, Jai Hyuk Song:
A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems. VLSI Circuits 2020: 1-2
2010 – 2019
- 2012
- [j1]Chulbum Kim, Jinho Ryu, Tae-Sung Lee, Hyunggon Kim, Jaewoo Lim, Jaeyong Jeong, Seonghwan Seo, Hongsoo Jeon, Bokeun Kim, Inyoul Lee, Dooseop Lee, Pansuk Kwak, Seongsoon Cho, Yongsik Yim, Changhyun Cho, Woopyo Jeong, Kwang-Il Park, Jin-Man Han, Duheon Song, Kyehyun Kyung, Youngho Lim, Young-Hyun Jun:
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface. IEEE J. Solid State Circuits 47(4): 981-989 (2012) - [c1]Daeyeal Lee, Ik Joon Chang, Sangyong Yoon, Joonsuc Jang, Dong-Su Jang, Wook-Ghee Hahn, Jong-Yeol Park, Doo-Gon Kim, Chiweon Yoon, Bong-Soon Lim, ByungJun Min, Sung-Won Yun, Ji-Sang Lee, Il-Han Park, Kyung-Ryun Kim, Jeong-Yun Yun, Youse Kim, Yong-Sung Cho, Kyung-Min Kang, Sang-Hyun Joo, Jin-Young Chun, Jung-No Im, Seunghyuk Kwon, Seokjun Ham, Ansoo Park, Jae-Duk Yu, Nam-Hee Lee, Tae-Sung Lee, Moosung Kim, Hoosung Kim, Ki-Whan Song, Byung-Gil Jeon, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Youngho Lim, Young-Hyun Jun:
A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology. ISSCC 2012: 430-432
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