We present a 64Gb multilevel cell (MLC) NAND Flash memory having 533Mb/s DDR interface in sub-20nm technology.
Feb 22, 2012 · To meet such a demand, we present a 64Gb multi- level cell (MLC) NAND Flash memory having 533Mb/s DDR interface in sub-. 20nm technology.
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A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology. D. Lee, I. Chang, S. Yoon, J. Jang, D. Jang, W. Hahn, J. Park, D. Kim, C. Yoon, B. Lim, ...
A 64Gb 533Mb/s DDR interface MLC NAND flash in sub-20nm technology. D Lee, IJ Chang, SY Yoon, J Jang, DS Jang, WG Hahn, JY Park, DG Kim, ... 2012 IEEE ...
A 64 Gb 533 Mb/s DDR interface MLC NAND Flash in sub-20 nm technology. In Proceedings of the 2012 IEEE International Solid-State Circuits Conference, San ...
A 64Gb 533Mb/s DDR interface MLC NAND flash in sub-20nm technology. D Lee, IJ Chang, SY Yoon, J Jang, DS Jang, WG Hahn, JY Park, DG Kim, ... 2012 IEEE ...
A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology · A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR ...
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(10pts) (c) NAND Flash: Using the sub-20nm (F=19nm) 2D NAND Flash in D. Lee, et al., "A 64Gb 533Mb/s DDR Interface MLC NAND Flash in Sub-20nm Technology ...
A 75 mm2 low power 64 Gb MLC NAND flash memory capable of 30 MB/s program throughput and 533 MB/s data transfer rate at 1.8 V supply voltage is developed in ...
Oct 22, 2024 · A 75 mm 2 low power 64 Gb MLC NAND flash memory capable of 30 MB/s program throughput and 533 MB/s data transfer rate at 1.8 V supply ...