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Tsuyoshi Funaki
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2020 – today
- 2024
- [c8]Shuhei Fukunaga
, Tsuyoshi Funaki
Evaluation of Phase Measurement Error in Digital Oscilloscopes. I2MTC 2024: 1-6 - 2022
- [j34]Shota Seki, Tsuyoshi Funaki, Jun Arima, Minoru Fujita, Jun Hirabayashi, Kazuyoshi Hanabusa:
Transient thermal characterization of β-Ga2O3 Schottky barrier diodes. IEICE Electron. Express 19(6): 20210558 (2022) - [j33]Hiroshi Suzuki, Tsuyoshi Funaki:
Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver. IEICE Trans. Electron. 105-C(12): 750-760 (2022) - 2020
- [c7]Takaaki Ibuchi, Tsuyoshi Funaki:
EMI characterization for power conversion circuit with SiC power devices. ATS 2020: 1-6 - [c6]Yoshihiko Susuki, Naoki Kawamoto, Yusuke Ohashi, Atsushi Ishigame, Tsuyoshi Funaki, Salvatore D'Arco
A Modular Approach to Large-Signal Modeling of an Interconnected AC/MTDC System. ISGT-Europe 2020: 945-949
2010 – 2019
- 2019
- [j32]Shuhei Fukunaga
An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD. IEICE Electron. Express 16(17): 20190392 (2019) - [j31]Keita Takahashi
Frequency-Domain EMI Simulation of Power Electronic Converter with Voltage-Source and Current-Source Noise Models. IEICE Trans. Commun. 102-B(9): 1853-1861 (2019) - [c5]Hideharu Sugihara, Tsuyoshi Funaki:
Analysis on Temperature Dependency of Effective AC Conductor Resistance of Underground Cables for Dynamic Line Ratings in Smart Grids. HPCC/SmartCity/DSS 2019: 2637-2643 - 2018
- [j30]Shuhei Fukunaga
An experimental study on estimating dynamic junction temperature of SiC MOSFET. IEICE Electron. Express 15(8): 20180251 (2018) - [j29]Takaaki Ibuchi, Eisuke Masuda, Tsuyoshi Funaki:
Visualization of noise current propagation in a power module with scanning time-synchronized near magnetic field measurement. IEICE Electron. Express 15(18): 20180669 (2018) - 2017
- [j28]Shuhei Fukunaga
Switching surge voltage suppression in SiC half-bridge module with double side conducting ceramic substrate and snubber capacitor. IEICE Electron. Express 14(11): 20170177 (2017) - [j27]Natthawuth Somakettarin
Open-circuit-voltage characterization system design for studies of phase-transition mechanism and deterioration in Mn-type Li-ion batteries. IEICE Electron. Express 14(15): 20170690 (2017) - [c4]Bonface Ngoko, Hideharu Sugihara, Tsuyoshi Funaki:
Methodology for the determination of real-time dynamic line ratings for secure operation of overhead conductors. ISGT Europe 2017: 1-6 - 2016
- [j26]Taehwa Kim, Tsuyoshi Funaki:
Transient thermal analysis of packaged SiC SBDs for high temperature operation. IEICE Electron. Express 13(6): 20151047 (2016) - 2015
- [j25]Takaaki Ibuchi, Tsuyoshi Funaki, Shinji Ujita, Masahiro Ishida, Tetsuzo Ueda
Conducted noise of GaN Schottky barrier diode in a DC-DC converter. IEICE Electron. Express 12(24): 20150912 (2015) - 2014
- [j24]Takaaki Ibuchi, Tsuyoshi Funaki:
Loss and conducted noise characteristics for CCM PFC circuit with SiC-Schottky barrier diode. IEICE Electron. Express 11(6): 20140142 (2014) - [j23]Tsuyoshi Funaki:
A study on the self turn-on phenomenon of power MOSFET induced by the turn-off operation of body diodes. IEICE Electron. Express 11(13): 20140350 (2014) - 2013
- [j22]Tsuyoshi Funaki:
Comparative study of self turn-on phenomenon in high-voltage Si and SiC power MOSFETs. IEICE Electron. Express 10(21): 20130744 (2013) - [j21]Satoshi Shiraki, Shigeki Takahashi, Youichi Ashida, Atsuyuki Hiruma, Tsuyoshi Funaki:
Loss reduction of lateral power diode on SOI substrate with trenched buried oxide layer. IEICE Electron. Express 10(23): 20130807 (2013) - [c3]Tsuyoshi Funaki:
A study on gate voltage fluctuation of MOSFET induced by switching operation of adjacent MOSFET in high voltage power conversion circuit. EMC Compo 2013: 113-118 - [c2]Hideharu Sugihara, Tsuyoshi Funaki:
A method for evaluating installable capacity of distributed generators with power factor control in MV and LV distribution networks. ISGT Europe 2013: 1-5 - 2012
- [j20]Tsuyoshi Funaki, Makiko Hirano, Hitoshi Umezawa, Shinichi Shikata:
High temperature switching operation of a power diamond Schottky barrier diode. IEICE Electron. Express 9(24): 1835-1841 (2012) - [j19]Alberto Castellazzi
Thermal instability effects in SiC Power MOSFETs. Microelectron. Reliab. 52(9-10): 2414-2419 (2012) - 2011
- [j18]Tsuyoshi Funaki, Yuki Nakano, Takashi Nakamura:
Comparative study of the static and switching characteristics of SiC and Si MOSFETs. IEICE Electron. Express 8(15): 1215-1220 (2011) - [j17]Takaaki Ibuchi, Tsuyoshi Funaki:
A study on modeling of dynamic characteristics of circuit component in TDR measurement based on Prony analysis. IEICE Electron. Express 8(18): 1534-1540 (2011) - [j16]Alberto Castellazzi
A study of SiC Power BJT performance and robustness. Microelectron. Reliab. 51(9-11): 1773-1777 (2011) - 2010
- [j15]Nathabhat Phankong
Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET. IEICE Electron. Express 7(7): 480-486 (2010) - [j14]Tsuyoshi Funaki, Hiroyasu Inoue, Masashi Sasagawa, Takashi Nakamura:
Characterization of SiC power module for high switching frequency operation. IEICE Electron. Express 7(14): 1008-1013 (2010) - [j13]Nathabhat Phankong
Switching characteristics of lateral-type and vertical-type SiC JFETs depending on their internal parasitic capacitances. IEICE Electron. Express 7(14): 1051-1057 (2010) - [j12]Kazuya Kodama, Tsuyoshi Funaki, Hitoshi Umezawa
Switching characteristics of a diamond Schottky barrier diode. IEICE Electron. Express 7(17): 1246-1251 (2010) - [j11]Yuko Omagari, Tsuyoshi Funaki:
Experimental validation of an equivalent mechanical model for understanding power system stability. IEICE Electron. Express 7(20): 1578-1583 (2010)
2000 – 2009
- 2009
- [j10]Tsuyoshi Funaki, Hisato Arioka, Takashi Hikihara
The influence of parasitic components on power MOSFET switching operation in power conversion circuits. IEICE Electron. Express 6(23): 1697-1701 (2009) - 2008
- [j9]Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena. IEICE Electron. Express 5(6): 198-203 (2008) - [j8]Tsuyoshi Funaki, Akira Nishio, Tsunenobu Kimoto, Takashi Hikihara
A study on electro thermal response of SiC power module during high temperature operation. IEICE Electron. Express 5(16): 597-602 (2008) - [j7]Tsuyoshi Funaki, Kuoto Nakagawa, Takashi Hikihara
The Origin of Nonlinear Phenomena in TCR-SVC Associated With Parametric Excitation of Intrinsic Oscillation and External Excitation. IEEE Trans. Circuits Syst. I Regul. Pap. 55-I(9): 2952-2958 (2008) - 2007
- [j6]Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET. IEICE Electron. Express 4(16): 517-523 (2007) - [j5]Takashi Hikihara
Enhanced Entrainment of Synchronous Inverters for Distributed Power Sources. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 90-A(11): 2516-2525 (2007) - 2006
- [j4]Tsuyoshi Funaki, Shuntaro Matsuzaki, Tsunenobu Kimoto, Takashi Hikihara
Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage. IEICE Electron. Express 3(16): 379-384 (2006) - 2005
- [j3]Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Anuwat Jangwanitlert, Sharmila Mounce, Fred D. Barlow
Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters. IEICE Electron. Express 2(3): 97-102 (2005) - [j2]Katsunori Asano, Tsuyoshi Funaki, Yoshitaka Sugawara, Takashi Hikihara
Simple circuit model of SiC pin diode composed by using experimental electrical characteristics. IEICE Electron. Express 2(13): 392-398 (2005) - [c1]Yoshihiko Susuki
Evaluating performance of hybrid-type power system simulator based on transient stability analysis: a dynamical system approach. ISCAS (4) 2005: 3894-3897 - 2004
- [j1]Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Avinash S. Kashyap, Fred D. Barlow
SiC JFET dc characteristics under extremely high ambient temperatures. IEICE Electron. Express 1(17): 523-527 (2004)
Coauthor Index
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