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Stephen J. Pearton
Person information
- affiliation: University of Florida, Gainesville, FL, USA
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2020 – today
- 2024
- [c3]Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Timothy Jinsoo Yoo, Meng-Hsun Yu, Fan Ren, Honggyu Kim, Yu-Te Liao, Stephen J. Pearton:
Demonstration of Record Breakdown up to 13.5 kV in NiO/β-Ga2O3 Vertical Rectifiers. DRC 2024: 1-2 - 2020
- [j9]Siang-Sin Shan, Shao-Yung Lu, Yuan-Po Yang, Shu-Ping Lin, Patrick Carey, Minghan Xian, Fan Ren, Stephen J. Pearton, Chin-Wei Chang, Jenshan Lin, Yu-Te Liao:
A Two-Electrode, Double-Pulsed Sensor Readout Circuit for Cardiac Troponin I Measurement. IEEE Trans. Biomed. Circuits Syst. 14(6): 1362-1370 (2020)
2010 – 2019
- 2019
- [c2]Shao-Yung Lu, Siang-Sin Shan, Jiancheng Yang, Chin-Wei Chang, Fan Ren, Jenshan Lin, Stephen J. Pearton, Yu-Te Liao:
A Reconfigurable, Pulse-shaping Potentiometric Readout System for Bio-Sensing Transistors. EMBC 2019: 5761-5764 - 2018
- [c1]Jiancheng Yang, Fan Ren, Marko J. Tadjer, Stephen J. Pearton, Akita Kuramata:
2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes. DRC 2018: 1-2 - 2017
- [j8]Patrick G. Whiting, M. R. Holzworth, A. G. Lind, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren, Y. Xin:
Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 70: 32-40 (2017) - [j7]Patrick G. Whiting, Nicholas G. Rudawski, M. R. Holzworth, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren:
Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts. Microelectron. Reliab. 70: 41-48 (2017) - 2012
- [j6]Stephen J. Pearton, Fan Ren:
Gallium nitride-based gas, chemical and biomedical sensors. IEEE Instrum. Meas. Mag. 15(1): 16-21 (2012) - [j5]E. A. Douglas, C. Y. Chang, B. P. Gila, M. R. Holzworth, Kevin S. Jones, Lu Liu, Jinhyung Kim, Soohwan Jang, Glen David Via, Fan Ren, Stephen J. Pearton:
Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors. Microelectron. Reliab. 52(1): 23-28 (2012) - [j4]Patrick G. Whiting, Nicholas G. Rudawski, M. R. Holzworth, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren:
Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 52(11): 2542-2546 (2012) - [j3]David J. Cheney, Rick Deist, Brent P. Gila, Jennilee Navales, Fan Ren, Stephen J. Pearton:
Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping. Microelectron. Reliab. 52(12): 2884-2888 (2012) - 2011
- [j2]E. A. Douglas, C. Y. Chang, David J. Cheney, B. P. Gila, Chi-Fai Lo, Liu Lu, M. R. Holzworth, Patrick G. Whiting, Kevin S. Jones, Glen David Via, Jinhyung Kim, Soohwan Jang, Fan Ren, Stephen J. Pearton:
AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress. Microelectron. Reliab. 51(2): 207-211 (2011)
2000 – 2009
- 2009
- [j1]Travis Anderson, Fan Ren, Stephen J. Pearton, Byoung Sam Kang, Hung-Ta Wang, Chih-Yang Chang, Jenshan Lin:
Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Sensors 9(6): 4669-4694 (2009)
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