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"Variation-Tolerant Write Completion Circuit for Variable-Energy Write ..."

Jaeyoung Park et al. (2016)

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DOI: 10.1109/TVLSI.2015.2449739

access: closed

type: Journal Article

metadata version: 2024-02-05

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  - https://dblp.org/rec/journals/tvlsi/ParkZEO16
Jaeyoung Park, Tianhao Zheng, Mattan Erez, Michael Orshansky:
Variation-Tolerant Write Completion Circuit for Variable-Energy Write STT-RAM Architecture. IEEE Trans. Very Large Scale Integr. Syst. 24(4): 1351-1360 (2016)

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