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"Experimental and simulated dc degradation of GaN HEMTs by means of ..."

Valerio Di Lecce et al. (2010)

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DOI: 10.1016/J.MICROREL.2010.07.126

access: closed

type: Journal Article

metadata version: 2024-05-07

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Valerio Di Lecce, Michele Esposto, Matteo Bonaiuti, Gaudenzio Meneghesso, Enrico Zanoni, Fausto Fantini, Alessandro Chini:
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress. Microelectron. Reliab. 50(9-11): 1523-1527 (2010)

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