default search action

combined dblp search
author search
venue search
publication search

ask others

"High voltage GaN vertical FinFET with a compatible integrated fin diode ..."

Zhijia Zhao et al. (2023)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2023.105781

access: closed

type: Journal Article

metadata version: 2023-06-07

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/ZhaoWSYWJDL023
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/ZhaoWSYWJDL023
Zhijia Zhao, Yuxi Wei, Tao Sun, Kemeng Yang, Jie Wei, Yanjiang Jia, Siyu Deng, Xiaorong Luo, Bo Zhang:
High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss. Microelectron. J. 136: 105781 (2023)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.