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"Electronic properties of GST for non-volatile memory."

Hangbing Lv et al. (2006)

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DOI: 10.1016/J.MEJO.2006.01.005

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - journals/mj/LvZLTQLFCC06
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  - https://dblp.org/rec/journals/mj/LvZLTQLFCC06
Hangbing Lv, Peng Zhou, Yinyin Lin, Tingao Tang, Baowei Qiao, Yunfeng Lai, Jie Feng, Bingchu Cai, Bomy Chen:
Electronic properties of GST for non-volatile memory. Microelectron. J. 37(9): 982-984 (2006)

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