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"K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W."

Noboru Negoro et al. (2012)

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DOI: 10.1587/TRANSELE.E95.C.1327

access: closed

type: Journal Article

metadata version: 2020-10-26

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  - journals/ieicet/NegoroKMNASUT12
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  persistent URL:
  - https://dblp.org/rec/journals/ieicet/NegoroKMNASUT12
Noboru Negoro, Masayuki Kuroda, Tomohiro Murata, Masaaki Nishijima, Yoshiharu Anda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka:
K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W. IEICE Trans. Electron. 95-C(8): 1327-1331 (2012)

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