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"SiGe HBT Power Amplifier design using 0.35 µm BiCMOS technology with ..."

Jingyang Zhang et al. (2011)

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DOI: 10.1109/ASICON.2011.6157396

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-25

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  dblp key:
  - conf/asicon/ZhangWDGNSF11
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Jingyang Zhang, Dawn Wang, Hanyi Ding, John Gillis, Wan Ni, Susan L. Sweeney, Dasheng Fang:
SiGe HBT Power Amplifier design using 0.35 µm BiCMOS technology with through-silicon-via. ASICON 2011: 1082-1085

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