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Naoki Kobayashi 0004
Person information
- affiliation: Toshiba Corporation
Other persons with the same name
- Naoki Kobayashi — disambiguation page
- Naoki Kobayashi 0001
— Graduate School of Information Science and Technology, University of Tokyo, Japan
- Naoki Kobayashi 0002 — NTT East Corporation Research and Development Center, Tokyo, Japan
- Naoki Kobayashi 0003 — Yamagata University School of Medicine, Japan
- Naoki Kobayashi 0005 — Hiroshima University, Japan
- Naoki Kobayashi 0006 — Tokyo University of Science, Japan
- Naoki Kobayashi 0007 — Tokyo Denki University, Dept. of Inf. Syst. & Multimedia Design
- Naoki Kobayashi 0008 — Keio University, Yokohama, Department of Electrical Engineering
- Naoki Kobayashi 0009 — Saitma Medical University, Hidaka-shi, Japan
- Naoki Kobayashi 0010 — Mie University, Tsu-city, Japan
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Journal Articles
- 2020
- [j2]Noboru Shibata
A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology. IEEE J. Solid State Circuits 55(1): 178-188 (2020) - 2013
- [j1]Kazushige Kanda, Noboru Shibata, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, Kiyoaki Iwasa, Masatsugu Kojima, Toshihiro Suzuki, Yuya Suzuki, Shintaro Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, Naoki Kobayashi, Yuuki Matsumoto, Satoshi Inoue, Yoshinao Suzuki, Yasuhiko Honda, Yosuke Kato, Shingo Zaitsu, Hardwell Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita:
A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface. IEEE J. Solid State Circuits 48(1): 159-167 (2013)
Conference and Workshop Papers
- 2019
- [c3]Noboru Shibata, Kazushige Kanda, Takahiro Shimizu, Jun Nakai, Osamu Nagao, Naoki Kobayashi, Makoto Miakashi, Yasushi Nagadomi, Takeshi Nakano, Takahisa Kawabe, Taira Shibuya, Mario Sako, Kosuke Yanagidaira, Toshifumi Hashimoto, Hiroki Date, Manabu Sato, Tomoki Nakagawa, H. Takamoto, Junji Musha, Takatoshi Minamoto, Mizuki Uda, Dai Nakamura, Katsuaki Sakurai, Takahiro Yamashita, Jieyun Zhou, Ryoichi Tachibana, Teruo Takagiwa, Takahiro Sugimoto, Mikio Ogawa, Yusuke Ochi, Kazuaki Kawaguchi, Masatsugu Kojima, Takeshi Ogawa, Tomoharu Hashiguchi, Ryo Fukuda, Masami Masuda, Koichi Kawakami, Tadashi Someya, Yasuyuki Kajitani, Yuuki Matsumoto, Naohito Morozumi, Jumpei Sato, Namas Raghunathan, Yee Lih Koh, Shuo Chen, Juan Lee, Hiroaki Nasu, Hiroshi Sugawara, Koji Hosono, Toshiki Hisada, T. Kaneko, Hiroshi Nakamura:
A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology. ISSCC 2019: 210-212 - 2018
- [c2]Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Naohito Morozumi, Ryo Fukuda, Yuui Shimizu, Toshifumi Hashimoto, Xu Li, Yuki Shimizu, Kenichi Abe, Tadashi Yasufuku, Takatoshi Minamoto, Hiroshi Yoshihara, Takahiro Yamashita, Kazuhiko Satou, Takahiro Sugimoto, Fumihiro Kono, Mitsuhiro Abe, Tomoharu Hashiguchi, Masatsugu Kojima, Yasuhiro Suematsu, Takahiro Shimizu, Akihiro Imamoto, Naoki Kobayashi, Makoto Miakashi, Kouichirou Yamaguchi, Sanad Bushnaq, Hicham Haibi, Masatsugu Ogawa, Yusuke Ochi, Kenro Kubota, Taichi Wakui, Dong He, Weihan Wang, Hiroe Minagawa, Tomoko Nishiuchi, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Lih Koh, Feng Lu, Venky Ramachandra, Srinivas Rajendra, Steve Choi, Keyur Payak, Namas Raghunathan, Spiros Georgakis, Hiroshi Sugawara, Seungpil Lee, Takuya Futatsuyama, Koji Hosono, Noboru Shibata, Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura:
A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology. ISSCC 2018: 336-338 - 2012
- [c1]Noboru Shibata, Kazushige Kanda, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Kazuko Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, J. Nakai, Kiyoaki Iwasa, Masatsugu Kojima, Toshihiro Suzuki, Yuya Suzuki, Shintaro Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, Makoto Miakashi, Naoki Kobayashi, M. Inagaki, Yuuki Matsumoto, Satoshi Inoue, Yoshinao Suzuki, D. He, Yasuhiko Honda, Junji Musha, Masaki Nakagawa, Mitsuaki Honma, Naofumi Abiko, Mitsumasa Koyanagi, Masahiro Yoshihara, Kazumi Ino, Mitsuhiro Noguchi, Teruhiko Kamei, Yosuke Kato, Shingo Zaitsu, Hiroaki Nasu, Takuya Ariki, Hardwell Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita, G. Liang, Gertjan Hemink, Farookh Moogat, Cuong Trinh, Masaaki Higashitani, Tuan Pham, Kousuke Kanazawa:
A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface. ISSCC 2012: 422-424
Coauthor Index
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