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Hiroshi Yoshihara
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2010 – 2019
- 2018
- [c3]Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Naohito Morozumi, Ryo Fukuda, Yuui Shimizu, Toshifumi Hashimoto, Xu Li, Yuki Shimizu, Kenichi Abe, Tadashi Yasufuku, Takatoshi Minamoto, Hiroshi Yoshihara, Takahiro Yamashita, Kazuhiko Satou, Takahiro Sugimoto, Fumihiro Kono, Mitsuhiro Abe, Tomoharu Hashiguchi, Masatsugu Kojima, Yasuhiro Suematsu, Takahiro Shimizu, Akihiro Imamoto, Naoki Kobayashi, Makoto Miakashi, Kouichirou Yamaguchi, Sanad Bushnaq, Hicham Haibi, Masatsugu Ogawa, Yusuke Ochi, Kenro Kubota, Taichi Wakui, Dong He, Weihan Wang, Hiroe Minagawa, Tomoko Nishiuchi, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Lih Koh, Feng Lu, Venky Ramachandra, Srinivas Rajendra, Steve Choi, Keyur Payak, Namas Raghunathan, Spiros Georgakis, Hiroshi Sugawara, Seungpil Lee, Takuya Futatsuyama, Koji Hosono, Noboru Shibata, Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura:
A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology. ISSCC 2018: 336-338 - 2011
- [c2]Wataru Otsuka, Koji Miyata, Makoto Kitagawa, Keiichi Tsutsui, Tomohito Tsushima, Hiroshi Yoshihara, Tomohiro Namise, Yasuhiro Terao, Kentaro Ogata:
A 4Mb conductive-bridge resistive memory with 2.3GB/s read-throughput and 216MB/s program-throughput. ISSCC 2011: 210-211
2000 – 2009
- 2008
- [c1]Osamu Takahashi, Chad Adams, D. Ault, Erwin Behnen, O. Chiang, Scott R. Cottier, Paula K. Coulman, James Culp, Gilles Gervais, M. S. Gray, Y. Itaka, C. J. Johnson, Fumihiro Kono, L. Maurice, Kevin W. McCullen
, Lam Nguyen, Y. Nishino, Hiromi Noro, Jürgen Pille, Mack W. Riley, M. Shen, Chiaki Takano, Shunsako Tokito, Tina Wagner, Hiroshi Yoshihara:
Migration of Cell Broadband Engine from 65nm SOI to 45nm SOI. ISSCC 2008: 86-87 - 2005
- [j1]Toru Asano, Joel Silberman, Sang H. Dhong, Osamu Takahashi, Michael White, Scott R. Cottier, Takaaki Nakazato, Atsushi Kawasumi, Hiroshi Yoshihara:
Low-Power Design Approach of 11FO4 256-Kbyte Embedded SRAM for the Synergistic Processor Element of a Cell Processor. IEEE Micro 25(5): 30-38 (2005)
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