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Marie Garcia Bardon
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2020 – today
- 2024
- [c11]Mattia Gerardi, Arvind Sharma, Yang Xiang, Jakub Kaczmarek, Fernando García-Redondo, Maarten Rosmeulen, Marie Garcia Bardon:
A DTCO Framework for 3D NAND Flash Readout. DATE 2024: 1-2 - 2023
- [c10]Fernando García-Redondo, S. Rao, M. Gupta, Manu Perumkunnil, Y. Xiang, D. Abdi, Simon Van Beek, S. Couet, Marie Garcia Bardon:
STT-MRAM Stochastic and Defects-aware DTCO for Last Level Cache at Advanced Process Nodes. ESSDERC 2023: 97-100 - [c9]S. Yang, Pieter Schuddinck, Marie Garcia Bardon, Yang Xiang, Anabela Veloso, B. T. Chan, Gioele Mirabelli, Gaspard Hiblot, Geert Hellings, Julien Ryckaert:
PPA and Scaling Potential of Backside Power Options in N2 and A14 Nanosheet Technology. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c8]Mohit Gupta, Manu Perumkunnil, Andrea Fantini, Saeideh Alinezhad Chamazcoti, Woojin Kim, Marie Garcia Bardon, Gouri Sankar Kar, Arnaud Furnémont:
Design exploration of IGZO diode based VCMA array design for Storage Class Memory Applications. ESSDERC 2022: 241-244 - 2021
- [c7]K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais, Guido Groeseneken, Jan Van Houdt:
Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. IMW 2021: 1-4
2010 – 2019
- 2016
- [c6]Praveen Raghavan, Marie Garcia Bardon, Peter Debacker, P. Schuddinck, Doyoung Jang, Rogier Baert, Diederik Verkest, Aaron Voon-Yew Thean:
5nm: Has the time for a device change come? ISQED 2016: 275-277 - 2015
- [j2]Halil Kükner, Pieter Weckx, Sébastien Morrison, Jacopo Franco, Maria Toledano-Luque, Moonju Cho, Praveen Raghavan, Ben Kaczer, Doyoung Jang, Kenichi Miyaguchi, Marie Garcia Bardon, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken:
Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. Microprocess. Microsystems 39(8): 1039-1051 (2015) - [c5]Praveen Raghavan, Marie Garcia Bardon, Doyoung Jang, P. Schuddinck, Dmitry Yakimets, Julien Ryckaert, Abdelkarim Mercha, Naoto Horiguchi, Nadine Collaert, Anda Mocuta, Dan Mocuta, Zsolt Tokei, Diederik Verkest, Aaron Thean, An Steegen:
Holisitic device exploration for 7nm node. CICC 2015: 1-5 - [c4]Marie Garcia Bardon, P. Schuddinck, Praveen Raghavan, Doyoung Jang, Dmitry Yakimets, Abdelkarim Mercha, Diederik Verkest, Aaron Thean:
Dimensioning for power and performance under 10nm: The limits of FinFETs scaling. ICICDT 2015: 1-4 - [c3]Dmitry Yakimets, Doyoung Jang, Praveen Raghavan, Geert Eneman, Hans Mertens, P. Schuddinck, Arindam Mallik, Marie Garcia Bardon, Nadine Collaert, Abdelkarim Mercha, Diederik Verkest, Aaron Thean, Kristin De Meyer:
Lateral NWFET optimization for beyond 7nm nodes. ICICDT 2015: 1-4 - 2014
- [c2]Julien Ryckaert, Praveen Raghavan, Rogier Baert, Marie Garcia Bardon, Mircea Dusa, Arindam Mallik, Sushil Sakhare, Boris Vandewalle, Piet Wambacq, Bharani Chava, Kris Croes, Morin Dehan, Doyoung Jang, Philippe Leray, Tsung-Te Liu, Kenichi Miyaguchi, Bertrand Parvais, Pieter Schuddinck, Philippe Weemaes, Abdelkarim Mercha, Jürgen Bömmels, Naoto Horiguchi, Greg McIntyre, Aaron Thean, Zsolt Tökei, Shaunee Cheng, Diederik Verkest, An Steegen:
Design Technology co-optimization for N10. CICC 2014: 1-8 - 2013
- [c1]Doyoung Jang, Marie Garcia Bardon, Dmitry Yakimets, Kenichi Miyaguchi, An De Keersgieter, Thomas Chiarella, Romain Ritzenthaler, Morin Dehan, Abdelkarim Mercha:
STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process. ESSDERC 2013: 159-162 - 2010
- [j1]Pavel Poliakov, Ankur Anchlia, Marie Garcia Bardon, Bram Rooseleer, Bart De Wachter, Nadine Collaert, Koen van der Zanden, Wim Dehaene, Diederik Verkest, Miguel Corbalan Miranda:
Circuit Design for Bias Compatibility in Novel FinFET-Based Floating-Body RAM. IEEE Trans. Circuits Syst. II Express Briefs 57-II(3): 183-187 (2010)
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