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Hyewon Shim
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2020 – today
- 2024
- [c12]Sangmin Oh, Taeyoung Jeong, Junghwan Yum, Minhyuk Lim, Yoohwan Kim, Bongyong Jeong, Jeongmin Jo, Hyewon Shim, Shin-Young Chung, Paul Jung:
An Analysis of CDM-induced BTI-like Degradation using VF-TLP in Advanced FinFET Technology. IRPS 2024: 1-5 - [c11]Rakesh Ranjan, Pavitra R. Perepa, Ki-Don Lee, Ashish Kumar Jha, Kartika C. Sahoo, Kayla N. Sanders, Robert Moeller, Prateek Sharma, Minhyo Kang, Peter Kim, Kwanjae Song, Yongwoo Jeon, Seungho Kim, Hyewon Shim, Shin-Young Chung, Ju Kwang Kim:
A Systematic Study of HCI Improvement in FinFET with Source/Drain Implant and Geometry Modulation. IRPS 2024: 5 - [c10]Seongkyung Kim, Junkyo Jeong, Eunyu Choi, Jinyoung Kim, Hyewon Shim, Shin-Young Chung, Paul Jung:
Hot-Carrier-Degradation Characterization for Accurate End-of-Life Prediction with 3nm GAA Logic Technology Featuring Multi-Bridge-Channel FET. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c9]Seongkyung Kim, Hyerim Park, Eunyu Choi, Young Han Kim, Dahyub Kim, Hyewon Shim, Shin-Young Chung, Paul Jung:
Reliability Assessment of 3nm GAA Logic Technology Featuring Multi-Bridge-Channel FETs. IRPS 2023: 1-8 - [c8]Rakesh Ranjan, Pavitra Ramadevi Perepa, Ki-Don Lee, Hokyung Park, Peter Kim, Ganesh Chakravarthy Yerubandi, Jon Haefner, Caleb Dongkyun Kwon, Minjung Jin, Wenhao Zhou, Hyewon Shim, Shin-Young Chung:
Impact of Barrier Metal Thickness on SRAM Reliability. IRPS 2023: 1-6 - [c7]Manisha Sharma, Hokyung Park, Yinghong Zhao, Ki-Don Lee, Liangshan Chen, Joonah Yoon, Rakesh Ranjan, Caleb Dongkyan Kwon, Hyewon Shim, Myungsoo Yeo, Shin-Young Chung, Jon Haefner:
Polarity Dependency of MOL-TDDB in FinFET. IRPS 2023: 1-3 - 2022
- [c6]Taiki Uemura, Byungjin Chung, Jegon Kim, Hyewon Shim, Shin-Young Chung, Brandon Lee, Jaehee Choi, Shota Ohnishi, Ken Machida:
Thermal-Neutron SER Mitigation by Cobalt-Contact in 7 nm Bulk-FinFET Technology. IRPS 2022: 7 - [c5]Taiki Uemura, Byungjin Chung, Jegon Kim, Hyewon Shim, Shin-Young Chung, Brandon Lee, Jaehee Choi, Shota Ohnishi, Ken Machida:
Accelerator-Based Thermal-Neutron Beam by Compact and Low-Cost Moderator for Soft-Error Evaluation in Semiconductor Devices. IRPS 2022: 53-1 - 2021
- [c4]Hai Jiang, Jinju Kim, Kihyun Choi, Hyewon Shim, Hyunchul Sagong, Junekyun Park, Hwasung Rhee, Euncheol Lee:
Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction. IRPS 2021: 1-6 - 2020
- [c3]Hai Jiang
, Hyun-Chul Sagong, Jinju Kim, Hyewon Shim, Yoohwan Kim, Junekyun Park, Taiki Uemura, Yongsung Ji, Taeyoung Jeong, Dongkyun Kwon, Hwasung Rhee, Sangwoo Pae, Brandon Lee:
Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c2]Hyewon Shim, Jeongmin Jo, Yoohwan Kim, Bongyong Jeong, Minji Shon, Hai Jiang, Sangwoo Pae:
Aging-Aware Design Verification Methods Under Real Product Operating Conditions. IRPS 2019: 1-4 - 2018
- [j1]Minjung Jin, Kangjung Kim, Yoohwan Kim, Hyewon Shim, Jinju Kim, Gunrae Kim, Sangwoo Pae:
Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack. Microelectron. Reliab. 81: 201-209 (2018) - [c1]Hyun-Chul Sagong, Hyunjin Kim, Seungjin Choo, Sungyoung Yoon, Hyewon Shim, Sangsu Ha, Tae-Young Jeong, Minhyeok Choe, Junekyun Park, Sangchul Shin, Sangwoo Pae:
Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology. IRPS 2018: 6
Coauthor Index
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